Datasheet

A2T07H310--24SR6
7
RF Device Data
Freescale Semiconductor, Inc.
Table 6. Carrier Side Load Pull Performance — Maximum Power Tuning
V
DD
=28Vdc,I
DQA
= 661 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Z
source
(Ω)
Z
in
(Ω)
Max Output Power
P1dB
Z
load
(1)
(Ω)
Gain (dB) (dBm) (W)
η
D
(%)
AM/PM
(°)
851 1.12 – j2.70 1.13 + j2.77 1.30 – j2.73 19.7 53.1 204 56.2 –8
865 1.16 – j2.79 1.21 + j2.89 1.24 – j2.80 19.5 53.2 210 56.8 –8
880 1.16 – j2.89 1.30 + j3.03 1.19 – j2.87 19.3 53.3 215 57.4 –8
f
(MHz)
Z
source
(Ω)
Z
in
(Ω)
Max Output Power
P3dB
Z
load
(2)
(Ω)
Gain (dB) (dBm) (W)
η
D
(%)
AM/PM
(°)
851 1.12 – j2.70 1.12 + j2.86 1.29 – j3.01 17.5 54.1 258 59.8 –11
865 1.16 – j2.79 1.20 + j2.98 1.22 – j3.06 17.3 54.2 263 59.2 –11
880 1.16 – j2.89 1.29 + j3.11 1.12 – j3.12 16.9 54.3 268 58.6 –12
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Table 7. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
V
DD
=28Vdc,I
DQA
= 661 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Z
source
(Ω)
Z
in
(Ω)
Max Drain Efficiency
P1dB
Z
load
(1)
(Ω)
Gain (dB) (dBm) (W)
η
D
(%)
AM/PM
(°)
851 1.12 – j2.70 1.08 + j2.78 3.72 – j0.98 23.1 50.5 113 73.7 –16
865 1.16 – j2.79 1.16 + j2.91 3.74 – j0.62 23.2 50.1 101 74.2 –19
880 1.16 – j2.89 1.24 + j3.02 3.23 – j1.04 22.8 50.4 110 72.8 –18
f
(MHz)
Z
source
(Ω)
Z
in
(Ω)
Max Drain Efficiency
P3dB
Z
load
(2)
(Ω)
Gain (dB) (dBm) (W)
η
D
(%)
AM/PM
(°)
851 1.12 – j2.70 1.09 + j2.86 4.40 – j1.30 21.3 50.9 124 75.8 –23
865 1.16 – j2.79 1.17 + j2.97 3.50 – j1.76 20.7 51.7 147 76.1 –21
880 1.16 – j2.89 1.25 + j3.10 3.36 – j1.39 20.7 51.3 135 75.8 –24
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
source
Z
in
Z
load
Output Load Pull
Tuner and Test
Circuit