Datasheet
8
RF Device Data
Freescale Semiconductor, Inc.
A2T07H310--24SR6
Table 8. Peaking Side Load Pull Performance — Maximum Power Tuning
V
DD
=28Vdc,V
GSB
=0.7Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Z
source
(Ω)
Z
in
(Ω)
Max Output Power
P1dB
Z
load
(1)
(Ω)
Gain (dB) (dBm) (W)
η
D
(%)
AM/PM
(°)
851 1.12 – j2.70 1.29 + j2.85 0.92 – j3.03 15.1 53.7 237 53.2 –15
865 1.16 – j2.79 1.38 + j2.99 0.94 – j3.06 15.2 53.9 245 55.4 –15
880 1.16 – j2.89 1.48 + j3.15 0.88 – j3.16 14.9 54.0 251 55.0 –15
f
(MHz)
Z
source
(Ω)
Z
in
(Ω)
Max Output Power
P3dB
Z
load
(2)
(Ω)
Gain (dB) (dBm) (W)
η
D
(%)
AM/PM
(°)
851 1.12 – j2.70 1.28 + j2.95 0.92 – j3.10 13.0 54.8 302 56.8 –19
865 1.16 – j2.79 1.38 + j3.10 0.90 – j3.25 12.8 54.9 310 57.4 –18
880 1.16 – j2.89 1.48 + j3.26 0.88 – j3.26 12.8 55.1 320 58.9 –19
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Table 9. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
V
DD
=28Vdc,V
GSB
=0.7Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Z
source
(Ω)
Z
in
(Ω)
Max Drain Efficiency
P1dB
Z
load
(1)
(Ω)
Gain (dB) (dBm) (W)
η
D
(%)
AM/PM
(°)
851 1.12 – j2.70 1.19 + j2.73 2.88 – j1.01 16.7 50.7 117 76.2 –26
865 1.16 – j2.79 1.28 + j2.87 2.60 – j1.20 16.6 50.8 121 76.0 –25
880 1.16 – j2.89 1.35 + j3.01 2.49 – j0.76 16.2 50.0 100 76.0 –29
f
(MHz)
Z
source
(Ω)
Z
in
(Ω)
Max Drain Efficiency
P3dB
Z
load
(2)
(Ω)
Gain (dB) (dBm) (W)
η
D
(%)
AM/PM
(°)
851 1.12 – j2.70 1.20 + j2.84 3.23 – j1.20 14.6 51.3 134 77.1 –32
865 1.16 – j2.79 1.30 + j3.01 2.60 – j1.80 14.6 52.1 162 76.6 –29
880 1.16 – j2.89 1.41 + j3.18 2.28 – j2.21 14.4 52.6 183 77.0 –28
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
source
Z
in
Z
load
Output Load Pull
Tuner and Test
Circuit