Datasheet

BAS70_1PS7XSB70_SER_9 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 09 — 13 January 2010 5 of 20
NXP Semiconductors
BAS70 series; 1PS7xSB70 series
General-purpose Schottky diodes
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] T
j
=25°C prior to surge.
Table 5. Marking codes
Type number Marking code
[1]
Type number Marking code
[1]
1PS76SB70 S2 BAS70-05W 75*
1PS79SB70 G BAS70-06 76*
BAS70 73* BAS70-06W 76*
BAS70H AH BAS70-07 77*
BAS70L S8 BAS70-07S 77*
BAS70W 73* BAS70-07V 77
BAS70-04 74* BAS70VV N1
BAS70-04W 74* BAS70XY 70*
BAS70-05 75* - -
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
R
reverse voltage - 70 V
I
F
forward current - 70 mA
I
FRM
repetitive peak forward
current
t
p
≤ 1s; δ≤0.5 - 70 mA
I
FSM
non-repetitive peak forward
current
t
p
≤ 10 ms
[1]
-100mA
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C