DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV199 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2001 Oct 12
NXP Semiconductors Product data sheet Low-leakage double diode FEATURES BAV199 MARKING • Plastic SMD package • Low leakage current: typ. 3 pA TYPE NUMBER MARKING CODE(1) PIN 1 anode BAV199 JY∗ 2 cathode 3 anode; cathode • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V PINNING Note DESCRIPTION 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. • Repetitive peak forward current: max. 500 mA.
NXP Semiconductors Product data sheet Low-leakage double diode BAV199 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF IR forward voltage see Fig.3 reverse current IF = 1 mA − 900 mV IF = 10 mA − 1 000 mV IF = 50 mA − 1100 mV IF = 150 mA − 1 250 mV VR = 75 V 0.003 5 nA VR = 75 V; Tj = 150 °C 3 80 nA see Fig.5 Cd diode capacitance f = 1 MHz; VR = 0; see Fig.
NXP Semiconductors Product data sheet Low-leakage double diode BAV199 GRAPHICAL DATA MLB756 300 MLB752 - 1 300 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 200 (1) (2) (3) single diode loaded 100 100 double diode loaded 0 0 100 T amb ( oC) 0 200 0 0.8 1.2 V F (V) 1.6 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on a FR4 printed-circuit board. Fig.2 0.
NXP Semiconductors Product data sheet Low-leakage double diode MLB754 2 10halfpage handbook, IR (nA) 10 BAV199 MBG526 2 handbook, halfpage (1) Cd (pF) 1 1 10 1 (2) 10 2 10 3 0 0 50 100 150 T j ( oC) 0 200 VR = 75 V. (1) Maximum values. (2) Typical values. Fig.5 5 10 15 VR (V) 20 f = 1 MHz; Tj = 25 °C. Reverse current as a function of junction temperature; per diode. Fig.
NXP Semiconductors Product data sheet Low-leakage double diode BAV199 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NXP Semiconductors Product data sheet Low-leakage double diode BAV199 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
