Datasheet

2001 Oct 12 2
NXP Semiconductors Product data sheet
Low-leakage double diode BAV199
FEATURES
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
• Continuous reverse voltage:
max.
75 V
• Repetitive peak reverse voltage:
max.
85 V
• Repetitive peak forward current:
max. 500
mA.
APPLICATION
• Low-leakage current applications in
surface mounted circuits.
DESCRIPTION
Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are
connected in series.
MARKING
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
TYPE NUMBER
MARKING
CODE
(1)
BAV199 JY∗
PINNING
PIN DESCRIPTION
1 anode
2 cathode
3 anode; cathode
Fig.1 Simplified outline (SOT23) and symbol.
handbook, 4 columns
21
3
Top view
MAM107
21
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
RRM
repetitive peak reverse voltage − 85 V
V
R
continuous reverse voltage − 75 V
I
F
continuous forward current single diode loaded; note 1; see Fig.2 − 160 mA
double diode loaded; note 1; see Fig.2 − 140 mA
I
FRM
repetitive peak forward current − 500 mA
I
FSM
non-repetitive peak forward
current
square wave; T
j
= 25 °C prior to surge;
see
Fig.4
t
p
= 1 µs − 4 A
t
p
= 1 ms − 1 A
t
p
= 1 s − 0.5 A
P
tot
total power dissipation T
amb
= 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C