Datasheet

2001 Oct 12 5
NXP Semiconductors Product data sheet
Low-leakage double diode BAV199
V
R
= 75 V.
(1) Maximum values.
(2) Typical values.
Fig.5 Reverse current as a function of junction
temperature; per diode.
handbook, halfpage
10
2
10
3
150 200
500
MLB754
100
10
1
10
1
10
2
I
R
(nA)
T ( C)
o
j
(1)
(2)
Fig.6 Diode capacitance as a function of reverse
voltage; per diode; typical values.
f = 1 MHz; T
j
= 25 °C.
handbook, halfpage
01020155
2
0
1
MBG526
V
R
(V)
C
d
(pF)
handbook, full pagewidth
t
rr
(1)
I
F
t
output signal
t
r
t
t
p
10%
90%
V
R
input signal
V = V I x R
RF S
R = 50
S
Ω
I
F
D.U.T.
R = 50
i
Ω
SAMPLING
OSCILLOSCOPE
MGA881
Fig.7 Reverse recovery time test circuit and waveforms.