Datasheet

1999 May 05 2
Philips Semiconductors Product specification
High-speed double diode BAV70
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 70 V
• Repetitive peak reverse voltage:
max. 75 V
• Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
• High-speed switching in thick and
thin-film circuits.
DESCRIPTION
The BAV70 consists of two
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the small SOT23 plastic SMD
package.
PINNING
PIN DESCRIPTION
1 anode (a1)
2 anode (a2)
3 common cathode
Fig.1 Simplified outline (SOT23) and symbol.
Marking code: A4p = made in Hong Kong. A4t = made in Malaysia.
handbook, halfpage
21
3
Top view
MAM383
2
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
RRM
repetitive peak reverse voltage − 85 V
V
R
continuous reverse voltage − 75 V
I
F
continuous forward current single diode loaded; note 1;
see Fig.2
− 215 mA
double diode loaded; note 1;
see Fig.2
− 125 mA
I
FRM
repetitive peak forward current − 450 mA
I
FSM
non-repetitive peak forward current square wave; T
j
=25°C prior to
surge; see Fig.4
t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A
P
tot
total power dissipation T
amb
=25°C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C