DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV99 High-speed double diode Product specification Supersedes data of 1996 Sep 17 1999 May 11
Philips Semiconductors Product specification High-speed double diode BAV99 FEATURES DESCRIPTION • Small plastic SMD package The BAV99 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max.
Philips Semiconductors Product specification High-speed double diode BAV99 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF IR forward voltage reverse current see Fig.3 IF = 1 mA 715 mV IF = 10 mA 855 mV IF = 50 mA 1 V IF = 150 mA 1.25 V VR = 25 V 30 nA VR = 75 V 1 µA VR = 25 V; Tj = 150 °C 30 µA see Fig.5 VR = 75 V; Tj = 150 °C 50 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 1.
Philips Semiconductors Product specification High-speed double diode BAV99 GRAPHICAL DATA MBD033 300 MBG382 300 handbook, halfpage IF (mA) IF (mA) (1) 200 (2) (3) 200 single diode loaded double diode loaded 100 100 0 0 0 100 T amb ( oC) 200 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.
Philips Semiconductors Product specification High-speed double diode BAV99 MGA884 105 Cd (pF) IR (nA) 10 V R = 75 V 4 max 103 10 MBG446 0.8 handbook, halfpage 0.6 75 V 0.4 25 V 2 0.2 typ typ 10 0 0 100 T j ( o C) 0 200 4 8 12 VR (V) 16 f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of junction temperature. 1999 May 11 Fig.6 5 Diode capacitance as a function of reverse voltage; typical values.
Philips Semiconductors Product specification High-speed double diode BAV99 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms.
Philips Semiconductors Product specification High-speed double diode BAV99 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
Philips Semiconductors Product specification High-speed double diode BAV99 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Philips Semiconductors Product specification High-speed double diode BAV99 NOTES 1999 May 11 9
Philips Semiconductors Product specification High-speed double diode BAV99 NOTES 1999 May 11 10
Philips Semiconductors Product specification High-speed double diode BAV99 NOTES 1999 May 11 11
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