Datasheet

BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 3 of 14
NXP Semiconductors
BAV99 series
High-speed switching diodes
5. Limiting values
[1] Single diode loaded.
[2] Double diode loaded.
[3] T
j
=25°C prior to surge.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[5] Soldering points at pins 2, 3, 5 and 6.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
RRM
repetitive peak reverse
voltage
-100V
V
R
reverse voltage - 100 V
I
F
forward current
BAV99
[1]
-215mA
[2]
-125mA
BAV99S
[1]
-200mA
BAV99W
[1]
-150mA
[2]
-130mA
I
FRM
repetitive peak forward
current
-500mA
I
FSM
non-repetitive peak
forward current
square wave
[3]
t
p
=1μs-4A
t
p
=1ms - 1 A
t
p
=1s - 0.5 A
P
tot
total power dissipation
[1][4]
BAV99 T
amb
≤ 25 °C-250mW
BAV99S T
sp
≤ 85 °C
[5]
-250mW
BAV99W T
amb
≤ 25 °C-200mW
Per device
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C