Datasheet

BAV99_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 8 — 18 November 2010 5 of 14
NXP Semiconductors
BAV99 series
High-speed switching diodes
(1) T
amb
= 150 °C
(2) T
amb
=85°C
(3) T
amb
=25°C
(4) T
amb
= −40 °C
(1) T
amb
= 150 °C
(2) T
amb
=85°C
(3) T
amb
=25°C
(4) T
amb
= −40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
f=1MHz; T
amb
=25°C Based on square wave currents.
T
j
=25°C; prior to surge
Fig 3. Diode capacitance as a function of reverse
voltage; typical values
Fig 4. Non-repetitive peak forward current as a
function of pulse duration; maximum values
006aab132
1
10
10
2
10
3
I
F
(mA)
10
−1
V
F
(V)
0 1.41.00.4 0.80.2 1.20.6
(1) (2) (3) (4)
006aab133
10
2
I
R
(μA)
V
R
(V)
0 1008040 6020
10
1
10
−1
10
−2
10
−3
10
−4
10
−5
(1)
(2)
(3)
(4)
0816124
0.8
0.6
0
0.4
0.2
mbg446
V
R
(V)
C
d
(pF
)
mbg704
10
1
10
2
I
FSM
(A)
10
−1
t
p
(μs)
110
4
10
3
10 10
2