Datasheet

ManualsBrandsNXP ManualsDiodesSmall Signal Diode 215mA 90V SOT-23

1. Product proﬁle

1.1 General description

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)

plastic packages.

1.2 Features

1.3 Applications

n High-speed switching

n General-purpose switching

1.4 Quick reference data

[1] When switched from I

= 10 mA to I

= 10 mA; R

= 100 Ω; measured at I

= 1 mA.

BAV756S; BAW56 series

High-speed switching diodes

Rev. 05 — 26 November 2007 Product data sheet

Table 1. Product overview

Type number Package Package

conﬁguration

Conﬁguration

NXP JEITA JEDEC

BAV756S SOT363 SC-88 - very small quadruple common

anode/common cathode

BAW56 SOT23 - TO-236AB small dual common anode

BAW56M SOT883 SC-101 - leadless ultra

small

dual common anode

BAW56S SOT363 SC-88 - very small quadruple common

anode/common anode

BAW56T SOT416 SC-75 - ultra small dual common anode

BAW56W SOT323 SC-70 - very small dual common anode

n High switching speed: t

≤ 4ns n Low capacitance: C

≤ 2pF

n Low leakage current n Reverse voltage: V

≤ 90 V

n Small SMD plastic packages

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per diode

reverse current V

= 80 V - - 0.5 µA

reverse voltage - - 90 V

reverse recovery time

[1]

--4ns

Summary of content (15 pages)

PAGE 1
BAV756S; BAW56 series High-speed switching diodes Rev. 05 — 26 November 2007 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1.
PAGE 2
BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 2. Pinning information Table 3.
PAGE 3
BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BAV756S SC-88 plastic surface-mounted package; 6 leads SOT363 BAW56 - plastic surface-mounted package; 3 leads SOT23 BAW56M SC-101 leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.
PAGE 4
BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter IFRM repetitive peak forward current IFSM non-repetitive peak forward current Conditions Min Max Unit - 500 mA tp = 1 µs - 4 A tp = 1 ms - 1 A - 0.
PAGE 5
BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes Table 7. Thermal characteristics …continued Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point Conditions Min Typ Max Unit BAV756S - - 255 K/W BAW56 - - 360 K/W BAW56S - - 255 K/W BAW56T - - 350 K/W BAW56W - - 300 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. 7.
PAGE 6
BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 006aab109 103 IF (mA) mbg704 102 IFSM (A) 102 10 10 1 (1) (2) (3) (4) 1 10−1 10−1 0.2 0.6 1.0 1 1.4 102 10 103 104 tp (µs) VF (V) (1) Tamb = 150 °C Based on square wave currents. (2) Tamb = 85 °C Tj = 25 °C; prior to surge (3) Tamb = 25 °C (4) Tamb = −40 °C Fig 1. Forward current as a function of forward voltage; typical values 006aab110 102 IR (µA) 10 (1) Fig 2.
PAGE 7
BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE V = VR + IF × RS trr t Ri = 50 Ω (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 5. Reverse recovery time test circuit and waveforms I 1 kΩ RS = 50 Ω D.U.T.
PAGE 8
BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 9. Package outline 3.0 2.8 0.62 0.55 0.55 0.47 1.1 0.9 3 3 0.30 0.22 0.45 0.15 0.50 0.46 2.5 1.4 2.1 1.2 1.02 0.95 0.65 1 0.30 0.22 2 0.48 0.38 1.9 0.15 0.09 0.20 0.12 04-11-04 Fig 7. Package outline BAW56 (SOT23/TO-236AB) 2.2 1.8 2.2 1.35 2.0 1.15 03-04-03 Fig 8. Package outline BAW56M (SOT883/SC-101) 0.45 0.15 4 0.95 0.60 1.8 1.4 3 0.45 0.15 1.75 0.9 1.45 0.7 pin 1 index 2 3 1 0.3 0.2 0.
PAGE 9
BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 10
BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 3.40 1.20 (2x) solder lands solder resist occupied area 2 1 4.60 4.00 1.20 3 Dimensions in mm preferred transport direction during soldering 2.80 sot023 4.50 Fig 13. Wave soldering footprint BAW56 (SOT23/TO-236AB) 1.30 R = 0.05 (12×) 0.30 R = 0.05 (12×) 0.35 (2×) 0.90 0.20 0.60 0.70 0.80 0.25 (2×) 0.30 (2×) 0.40 (2×) 0.50 (2×) 0.30 0.40 0.
PAGE 11
BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 2.65 0.60 (2×) 0.40 0.90 2.10 (2×) 2.35 solder lands solder paste 0.50 (4×) solder resist occupied area 0.50 (4×) Dimensions in mm 1.20 2.40 sot363 Fig 15. Reflow soldering footprint BAV756S and BAW56S (SOT363/SC-88) 5.25 0.30 1.00 4.00 4.50 solder lands solder resist occupied area 1.15 3.75 transport direction during soldering Dimensions in mm sot363 Fig 16.
PAGE 12
BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 2.2 0.6 1.1 0.7 2 2.0 3 0.85 1.5 0.5 (3x) 1 0.6 (3x) msa438 1.9 solder lands solder resist Dimensions in mm solder paste occupied area Fig 17. Reflow soldering footprint BAW56T (SOT416/SC-75) 2.65 0.75 1.325 1.30 solder lands 2 solder paste 0.60 2.35 0.85 (3×) 0.50 (3×) 1.90 3 solder resist occupied area 1 Dimensions in mm 0.55 (3×) 2.40 msa429 Fig 18. Reflow soldering footprint BAW56W (SOT323/SC-70) 4.60 4.00 1.
PAGE 13
BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 12. Revision history Table 10. Revision history Document ID Release date BAV756S_BAW56_SER_5 20071126 Modifications: Data sheet status Change notice Supersedes Product data sheet - BAV756S_2 BAW56_4 BAW56S_2 BAW56T_2 BAW56W_4 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors.
PAGE 14
BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 15
NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .