Datasheet

BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 3 of 15
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 4. Ordering information
Type number Package
Name Description Version
BAV756S SC-88 plastic surface-mounted package; 6 leads SOT363
BAW56 - plastic surface-mounted package; 3 leads SOT23
BAW56M SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm
SOT883
BAW56S SC-88 plastic surface-mounted package; 6 leads SOT363
BAW56T SC-75 plastic surface-mounted package; 3 leads SOT416
BAW56W SC-70 plastic surface-mounted package; 3 leads SOT323
Table 5. Marking codes
Type number Marking code
[1]
BAV756S A7*
BAW56 A1*
BAW56M S5
BAW56S A1*
BAW56T A1
BAW56W A1*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
RRM
repetitive peak reverse
voltage
-90V
V
R
reverse voltage - 90 V
I
F
forward current
BAV756S T
s
=60°C - 250 mA
BAW56 T
amb
≤ 25 °C - 215 mA
BAW56M T
amb
≤ 25 °C - 150 mA
BAW56S T
s
=60°C - 250 mA
BAW56T T
s
=90°C - 150 mA
BAW56W T
amb
≤ 25 °C - 150 mA