Datasheet

BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 4 of 15
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
[1] T
j
=25°C prior to surge.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Reflow soldering is the only recommended soldering method.
[4] Single diode loaded.
6. Thermal characteristics
I
FRM
repetitive peak forward
current
- 500 mA
I
FSM
non-repetitive peak forward
current
square wave
[1]
t
p
=1µs-4A
t
p
=1ms - 1 A
t
p
= 1 s - 0.5 A
P
tot
total power dissipation
[2]
BAV756S T
s
=60°C - 350 mW
BAW56 T
amb
≤ 25 °C - 250 mW
BAW56M T
amb
≤ 25 °C
[3]
- 250 mW
BAW56S T
s
=60°C - 350 mW
BAW56T T
s
=90°C
[4]
- 170 mW
BAW56W T
amb
≤ 25 °C - 200 mW
Per device
I
F
forward current
BAV756S T
s
=60°C - 100 mA
BAW56 T
amb
≤ 25 °C - 125 mA
BAW56M T
amb
≤ 25 °C - 75 mA
BAW56S T
s
=60°C - 100 mA
BAW56T T
s
=90°C - 75 mA
BAW56W T
amb
≤ 25 °C - 130 mA
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 6. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per diode
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
BAW56 - - 500 K/W
BAW56M
[2]
- - 500 K/W
BAW56W - - 625 K/W