Datasheet

BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 5 of 15
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
[2] When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100 Ω; measured at I
R
= 1 mA.
[3] When switched from I
F
= 10 mA; t
r
=20ns.
R
th(j-sp)
thermal resistance from
junction to solder point
BAV756S - - 255 K/W
BAW56 - - 360 K/W
BAW56S - - 255 K/W
BAW56T - - 350 K/W
BAW56W - - 300 K/W
Table 7. Thermal characteristics
…continued
Symbol Parameter Conditions Min Typ Max Unit
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
forward voltage
[1]
I
F
= 1 mA - - 715 mV
I
F
= 10 mA - - 855 mV
I
F
=50mA --1V
I
F
= 150 mA - - 1.25 V
I
R
reverse current V
R
=25V --30nA
V
R
= 80 V - - 0.5 µA
V
R
=25V;T
j
= 150 °C--30µA
V
R
=80V;T
j
= 150 °C - - 150 µA
C
d
diode capacitance V
R
= 0 V; f = 1 MHz - - 2 pF
t
rr
reverse recovery time
[2]
--4ns
V
FR
forward recovery voltage
[3]
- - 1.75 V