Datasheet

BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 7 of 15
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
8. Test information
(1) I
R
=1mA
Input signal: reverse pulse rise time t
r
= 0.6 ns; reverse voltage pulse duration t
p
= 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time t
r
= 0.35 ns
Fig 5. Reverse recovery time test circuit and waveforms
Input signal: forward pulse rise time t
r
= 20 ns; forward current pulse duration t
p
≥ 100 ns; duty cycle δ≤0.005
Fig 6. Forward recovery voltage test circuit and waveforms
t
rr
(1)
+ I
F
t
output signal
t
r
t
p
t
10 %
90 %
V
R
input signal
V = V
R
+ I
F
× R
S
R
S
= 50 Ω
I
F
D.U.T.
R
i
= 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
t
r
t
t
p
10 %
90 %
I
input signal
R
S
= 50 Ω
I
R
i
= 50 Ω
OSCILLOSCOPE
1 kΩ 450 Ω
D.U.T.
mga882
V
FR
t
output signal
V