Datasheet

BGA7130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 9 October 2012 13 of 27
NXP Semiconductors
BGA7130
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
[1] length (L) is specified, width (W) = 1.14 mm and spacing (S) = 0.8 mm.
14.2 Characteristics LTE-750
R4 resistor 0  0 
L1 RF choke 68 nH 18 nH
L2 inductor 1.5 nH -
X1, X2 SMA connector - -
Table 12. List of components
…continued
See Figure 5 for schematics.
Component Description Value Remarks
LTE-750 UMTS-2140
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for LTE-750.
(1) T
amb
= 40 C
(2) T
amb
= +25 C
(3) T
amb
= +85 C
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for LTE-750.
(1) T
amb
= 40 C
(2) T
amb
= +25 C
(3) T
amb
= +85 C
Fig 10. Power gain as a function of frequency for
LTE-750 application; typical values
Fig 11. Isolation as a function of frequency for
LTE-750 application; typical values
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