Datasheet
BGA7130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 9 October 2012 14 of 27
NXP Semiconductors
BGA7130
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for LTE-750.
(1) T
amb
= 40 C
(2) T
amb
= +25 C
(3) T
amb
= +85 C
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for LTE-750.
(1) T
amb
= 40 C
(2) T
amb
= +25 C
(3) T
amb
= +85 C
Fig 12. Input return loss as a function of frequency for
LTE-750 application; typical values
Fig 13. Output return loss as a function of frequency
for LTE-750 application; typical values
V
SUP
= 5 V; I
CC(tot)
= 450 mA; P
L
= 19 dBm per tone;
f = 748 MHz; f = 1 MHz; matched for LTE-750.
(1) T
amb
= 40 C
(2) T
amb
= +25 C
(3) T
amb
= +85 C
T
amb
= 25 C; I
CC(tot)
= 450 mA; P
L
= 19 dBm per tone;
f = 748 MHz; f = 1 MHz; matched for LTE-750.
(1) V
SUP
= 4.75 V
(2) V
SUP
= 5 V
(3) V
SUP
= 5.25 V
Fig 14. Output third order intercept point as a function
of frequency for LTE-750 application; different
temperatures; typical values
Fig 15. Output third order intercept point as a function
of frequency for LTE-750 application; different
supply voltages; typical values
DDD
I*+]
_V_V
_
_V
_
G%G%G%
DDD
I*+]
_V_V
_
_V
_
G%G%G%
DDD
I0+]
,3,3
2
,3
2
G%PG%PG%P
DDD
I0+]
,3,3
2
,3
2
G%PG%PG%P