Datasheet
BGA7130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 9 October 2012 15 of 27
NXP Semiconductors
BGA7130
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
V
SUP
= 5 V; I
CC(tot)
= 450 mA; f = 748 MHz; f=1MHz;
matched for LTE-750.
(1) T
amb
= 40 C
(2) T
amb
= +25 C
(3) T
amb
= +85 C
T
amb
= 25 C; I
CC(tot)
= 450 mA; f = 748 MHz; f=1MHz;
matched for LTE-750.
(1) V
SUP
= 4.75 V
(2) V
SUP
= 5 V
(3) V
SUP
= 5.25 V
Fig 16. Output third order intercept point as a function
of output power for LTE-750 application;
different temperatures; typical values
Fig 17. Output third order intercept point as a function
of output power for LTE-750 application;
different supply voltages; typical values
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for LTE-750.
(1) T
amb
= 40 C
(2) T
amb
= +25 C
(3) T
amb
= +85 C
T
amb
= 25 C; I
CC(tot)
= 450 mA; matched for LTE-750.
(1) V
SUP
= 4.75 V
(2) V
SUP
= 5 V
(3) V
SUP
= 5.25 V
Fig 18. Output power at 1 dB gain compression as a
function of frequency for LTE-750 application;
different temperatures; typical values
Fig 19. Output power at 1 dB gain compression as a
function of frequency for LTE-750 application;
different supply voltages; typical values
DDD
3
/
G%PSHUWRQH
,3,3
2
,3
2
G%PG%PG%P
DDD
3
/
G%PSHUWRQH
,3,3
2
,3
2
G%PG%PG%P
DDD
I0+]
3
/G%/G%
3
/G%
G%G%G%
DDD
I0+]
3
/G%/G%
3
/G%
G%G%G%