Datasheet
BGA7130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 9 October 2012 16 of 27
NXP Semiconductors
BGA7130
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for LTE-750.
(1) T
amb
= 40 C
(2) T
amb
= +25 C
(3) T
amb
= +85 C
T
amb
= 25 C; I
CC(tot)
= 450 mA; matched for LTE-750.
(1) V
SUP
= 4.75 V
(2) V
SUP
= 5 V
(3) V
SUP
= 5.25 V
Fig 20. Noise figure as a function of frequency for
LTE-750 application; different temperatures;
typical values
Fig 21. Noise figure as a function of frequency for
LTE-750 application; different supply voltages;
typical values
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for LTE-750. V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for LTE-750.
Fig 22. Power-on delay time; typical values Fig 23. Power-down delay time; typical values
DDD
I*+]
1)1)1)
G%G%G%
DDD
I*+]
1)1)1)
G%G%G%
DDD
WȝV
9
,GLJ,GLJ
9
,GLJ
999
9
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9
,5)287
P9P9P9
9
,GLJ,GLJ
9
,GLJ
99
,5)287,5)287
9
,5)287
DDD
WȝV
9
,GLJ,GLJ
9
,GLJ
999
9
,5)287,5)287
9
,5)287
P9P9P9
9
,GLJ,GLJ
9
,GLJ
99
,5)287,5)287
9
,5)287