Datasheet
BGA7130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 9 October 2012 17 of 27
NXP Semiconductors
BGA7130
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
14.3 Characteristics UMTS-2140
V
SUP
= 5 V; I
CC(tot)
= 450 mA; pin ENABLE = LOW;
matched for LTE-750.
(1) G
p
(2) ISL
V
SUP
= 5 V; I
CC(tot)
= 450 mA; pin ENABLE = LOW;
matched for LTE-750.
(1) s
11
2
(2) s
22
2
Fig 24. Isolation in power-down mode; typical values Fig 25. Return loss in power-down mode; typical
values
DDD
I*+]
*
S
,6/,6/*
S
,6/
G%G%G%
DDD
I*+]
_V_V
_
_V_V
_
_V
_
_V
_
G%G%G%
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for UMTS-2140.
(1) T
amb
= 40 C
(2) T
amb
= +25 C
(3) T
amb
= +85 C
V
SUP
= 5 V; I
CC(tot)
= 450 mA; matched for UMTS-2140.
(1) T
amb
= 40 C
(2) T
amb
= +25 C
(3) T
amb
= +85 C
Fig 26. Power gain as a function of frequency for
UMTS-2140 application; typical values
Fig 27. Isolation as a function of frequency for
UMTS-2140 application; typical values
DDD
I*+]
*
S
*
S
G%G%G%
DDD
I*+]
,6/,6/,6/
G%G%G%