Datasheet

BGA7130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 9 October 2012 8 of 27
NXP Semiconductors
BGA7130
400 MHz to 2700 MHz 1 W high linearity silicon amplifier
[1] Covering downlink frequency range of eUTRAN bands 11, 13, 14 and 17.
[2] Covering downlink frequency range of eUTRAN bands 1, 4 and 10.
[3] Two carrier W-CDMA; each carrier according to 3GPP test model 1; 64 DPCH; PAR for composite signal = 7 dB; 5 MHz carrier spacing.
14. Application information
The BGA7130 can be used for a wide variety of applications. This section describes two
example base station applications: LTE at 750 MHz and UMTS at 2140 MHz. It serves as
a pre-driver for the high-power amplifier in the Base Transceiver Station (BTS), see
Figure 4
.
ISL isolation 2110 MHz  f  2170 MHz - 24 - dB
2110 MHz  f  2170 MHz; pin ENABLE = LOW - 15 - dB
t
d(pu)
power-up delay time after pin ENABLE is switched to logic HIGH;
to within 0.1 dB of final gain state.
-3-s
t
d(pd)
power-down delay time after pin ENABLE is switched to logic LOW;
to within 0.1 dB of final gain state.
-0.5-s
Table 9. Dynamic characteristics …continued
4.75 V  V
SUP
 5.25 V;  40  C  T
case
 85  C; P
i
<  20 dBm; R3 = 523  (tolerance 1 %); input and output impedances
matched to 50  (see Section 14); pin ENABLE = HIGH; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Fig 4. Simplified schematic representation of a Base Transceiver Station (BTS)
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