Datasheet

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BSH108

N-channel enhancement mode ﬁeld-effect transistor

Rev. 02 — 25 October 2000 Product speciﬁcation

M3D088

1. Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™

technology.

Product availability:

BSH108 in SOT23.

2. Features

■ TrenchMOS™ technology

■ Very fast switching

■ Logic level compatible

■ Subminiature surface mount package.

3. Applications

■ Battery management

■ High speed switch

■ Low power DC to DC converter.

4. Pinning information

1. TrenchMOS is a trademark of Royal Philips Electronics.

Table 1: Pinning - SOT23, simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g)

SOT23

2 source (s)

3 drain (d)

MSB003

Top view

MBB076

Summary of content (14 pages)

PAGE 1
BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH108 in SOT23. 2. Features ■ ■ ■ ■ TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications c c ■ Battery management ■ High speed switch ■ Low power DC to DC converter. 4.
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BSH108 Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter VDS drain-source voltage (DC) Conditions Typ Max Unit Tj = 25 to 150 °C − 30 V ID drain current (DC) Tsp = 25 °C; VGS = 5 V − 1.9 A Ptot total power dissipation Tsp = 25 °C − 0.83 W Tj junction temperature − 150 °C RDSon drain-source on-state resistance VGS = 10 V; ID = 1 A 77 120 mΩ VGS = 5 V; ID = 1 A 102 140 mΩ 6.
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BSH108 Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa17 03aa25 120 120 der (%) 100 Ider (%) 100 80 80 60 60 40 40 20 20 P 0 0 0 25 50 75 100 125 Tsp 150 (oC) 0 175 25 50 75 100 125 150 175 Tsp (oC) VGS ≥ 5 V P tot P der = ---------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2.
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BSH108 Philips Semiconductors N-channel enhancement mode field-effect transistor 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit Rth(j-sp) thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 4 150 K/W Rth(j-a) thermal resistance from junction to ambient 350 K/W mounted on a printed circuit board; minimum footprint 7.1 Transient thermal impedance 03aa79 103 Zth(j-sp) (K/W) δ = 0.5 102 0.2 0.1 10 0.
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BSH108 Philips Semiconductors N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 30 40 − V Tj = −55 °C 27 − − V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain-source leakage current ID = 10 µA; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C 1 1.5 2 V Tj = 150 °C 0.
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BSH108 Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa83 03aa81 5 10 V ID (A) 4.5 3.4 V 3V 5 ID (A) 4.5 5V 4 VDS > ID X RDSon 4 VGS = 2.8 V 3.5 3.5 3 3 Tj = 25 oC 2.5 2.6 V 2.5 2.4 V 1.5 2 2 1.5 1 0.5 150 oC 1 2.2 V Tj = 25 oC 0.5 2V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VDS (V) Tj = 25 °C 0 0.5 1 1.5 2 2.5 3 3.5 VGS (V) 4 Tj = 25 °C and 150 °C; VDS > ID × RDSon Fig 5.
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BSH108 Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa33 2.5 V GS(th) (V) 03aa36 10-1 ID (A) 10-2 max 2 typ 10-3 1.5 min 1 10-4 0.5 10-5 min typ max 10-6 0 -60 -20 20 60 100 0 140 180 Tj (oC) 0.5 1 1.5 2 2.5 3 VGS (V) Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage.
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BSH108 Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa85 5 IS 4.5 (A) 03ab10 15 VGS 14 (V) 13 12 11 10 VGS = 0V 4 3.5 150 oC 3 VDD = 15 V Tj = 25 oC 9 8 7 6 2.5 Tj = 25 oC 2 ID = 0.5 A 5 4 3 2 1.5 1 0.5 1 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1 2 3 4 5 VSD (V) 7 8 9 10 QG (nC) Tj = 25 °C and 150 °C; VGS = 0 V ID = 0.5 A; VDD = 15 V; Tj = 25 °C Fig 13.
PAGE 9
BSH108 Philips Semiconductors N-channel enhancement mode field-effect transistor 9. Package outline Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
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BSH108 Philips Semiconductors N-channel enhancement mode field-effect transistor 10. Revision history Table 6: Revision history Rev Date 02 20001025 CPCN Description - Product specification; second version; supersedes Rev.01 of 20000906. Correction to diode IS; see Table 3 “Limiting values” 01 20000906 - Product specification. © Philips Electronics N.V. 2000. All rights reserved. 9397 750 07652 Product specification Rev.
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BSH108 Philips Semiconductors N-channel enhancement mode field-effect transistor 11. Data sheet status Datasheet status Product status Definition [1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date.
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BSH108 Philips Semiconductors N-channel enhancement mode field-effect transistor Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax.
PAGE 13
BSH108 Philips Semiconductors N-channel enhancement mode field-effect transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . .
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