Datasheet

Philips Semiconductors Product specification
Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction per diode - - 2.4 K/W
to mounting base both diodes - - 1.6 K/W
R
th j-a
Thermal resistance junction SOT78 package, in free air - 60 - K/W
to ambient SOT404 and SOT428 packages, pcb - 50 - K/W
mounted, minimum footprint, FR4 board
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage I
F
= 8 A; T
j
= 150˚C - 0.72 0.85 V
I
F
= 20 A - 1.00 1.15 V
I
R
Reverse current V
R
= V
RWM
; T
j
= 100 ˚C - 0.2 0.6 mA
V
R
= V
RWM
-630µA
Q
s
Reverse recovery charge I
F
= 2 A; V
R
≥ 30 V; -dI
F
/dt = 20 A/µs - 8 12.5 nC
t
rr1
Reverse recovery time I
F
= 1 A; V
R
≥ 30 V; - 20 25 ns
-dI
F
/dt = 100 A/µs
t
rr2
Reverse recovery time I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A - 10 20 ns
V
fr
Forward recovery voltage I
F
= 1 A; dI
F
/dt = 10 A/µs-1-V
August 2001 2 Rev 1.300