Datasheet

Philips Semiconductors Product specification
Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Circuit schematic for t
rr2
Fig.4. Definition of t
rr2
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x √D.
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
I = 1A
R
rec
I = 0.25A
0A
trr2
0.5A
IF
IR
time
time
V
F
V
fr
V
F
I
F
0 5 10 15
0
5
10
15
D = 1.0
0.5
0.2
0.1
BYV32
IF(AV) / A
PF / W
Tmb(max) / C
150
138
126
114
Vo = 0.7 V
Rs = 0.0183 Ohms
D =
t
p
t
p
T
T
t
I
shunt
Current
to ’scope
D.U.T.
Voltage Pulse Source
R
0246810
0
2
4
6
8
10
1.9
2.2
2.8
4
BYV32
IF(AV) / A
PF / W
a = 1.57
Tmb(max) / C
150
145.2
140.4
135.6
130.8
126
Vo = 0.7 V
Rs = 0.0183 Ohms
August 2001 3 Rev 1.300