Datasheet

Philips Semiconductors Product specification
Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged
Fig.7. Maximum t
rr
at T
j
= 25 ˚C; per diode
Fig.8. Maximum I
rrm
at T
j
= 25 ˚C; per diode
Fig.9. Typical and maximum forward characteristic
per diode; I
F
= f(V
F
); parameter T
j
Fig.10. Maximum Q
s
at T
j
= 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
1
10
trr / ns
1 10 100
1000
100
dIF/dt (A/us)
IF=1A
IF=10A
10
1.0
1.0 10 100
-dIF/dt (A/us)
Qs / nC
IF=10A
5A
2A
1A
100
10
1
0.1
0.01
Irrm / A
1
10 100
-dIF/dt (A/us)
IF=1A
IF=10A
1us 10us 100us 1ms 10ms 100ms 1s 10s
0.001
0.01
0.1
1
10
BYV32E
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
0 1
30
20
10
0
0.5 1.5
VF / V
IF / A
typ
max
Tj=150 C
Tj=25 C
August 2001 4 Rev 1.300