Datasheet

Philips Semiconductors Product specification
Rectifier diodes BYV42E series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction to per diode - - 2.4 K/W
mounting base both diodes conducting - - 1.4 K/W
R
th j-a
Thermal resistance junction to in free air - 60 - K/W
ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage (per diode) I
F
= 15 A; T
j
= 150˚C - 0.78 0.85 V
I
F
= 15 A - 0.95 1.05 V
I
F
= 30 A - 1.00 1.20 V
I
R
Reverse current (per diode) V
R
= V
RWM
; T
j
= 100 ˚C - 0.5 1 mA
V
R
= V
RWM
- 10 100 µA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Q
s
Reverse recovery charge (per I
F
= 2 A; V
R
≥ 30 V; -dI
F
/dt = 20 A/µs - 6 15 nC
diode)
t
rr1
Reverse recovery time (per I
F
= 1 A; V
R
≥ 30 V; - 20 28 ns
diode) -dI
F
/dt = 100 A/µs
t
rr2
Reverse recovery time (per I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A - 13 22 ns
diode)
V
fr
Forward recovery voltage (per I
F
= 1 A; dI
F
/dt = 10 A/µs - 1 - V
diode)
October 1994 2 Rev 1.100