Datasheet

Philips Semiconductors Product specification
Rectifier diodes BYV42E series
ultrafast, rugged
Fig.7. Maximum t
rr
at T
j
= 25 ˚C; per diode
Fig.8. Maximum I
rrm
at T
j
= 25 ˚C; per diode
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Maximum Q
s
at T
j
= 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
1
10
trr / ns
1 10 100
1000
100
dIF/dt (A/us)
IF=1A
IF=20A
100
10
1.0
1.0 10 100
-dIF/dt (A/us)
Qs / nC
IF=20A
10A
5A
2A
1A
10
1
0.1
0.01
Irrm / A
1
10 100
-dIF/dt (A/us)
IF=1A
IF=20A
0.1
0.01
10 s0.11 ms10 us
tp / s
Zth (K/W)
10
1
t
p
t
D
P
0
VF / V
50
40
30
20
10
0
0.5 1.51.0
Tj = 150 C
Tj = 25 C
IF / A
max
typ
October 1994 4 Rev 1.100