Datasheet

i.MX 6Dual/6Quad Applications Processors for Industrial Products, Rev. 6, 11/2018
36 NXP Semiconductors
Electrical Characteristics
4.6 I/O DC Parameters
This section includes the DC parameters of the following I/O types:
• General Purpose I/O (GPIO)
• Double Data Rate I/O (DDR) for LPDDR2 and DDR3/DDR3L modes
•LVDS I/O
NOTE
The term ‘OVDD’ in this section refers to the associated supply rail of an
input or output.
Figure 3. Circuit for Parameters Voh and Vol for I/O Cells
Table 19. OSC32K Main Characteristics
Parameter Min Typ Max Comments
Fosc — 32.768 kHz — This frequency is nominal and determined mainly by the crystal selected. 32.0 K
would work as well.
Current
consumption
—4 μA — The typical value shown is only for the oscillator, driven by an external crystal.
If the internal ring oscillator is used instead of an external crystal, then
approximately 25 μA must be added to this value.
Bias resistor — 14 MΩ — This the integrated bias resistor that sets the amplifier into a high gain state. Any
leakage through the ESD network, external board leakage, or even a scope probe
that is significant relative to this value will debias the amplifier. The debiasing will
result in low gain, and will impact the circuit's ability to start up and maintain
oscillations.
Target Crystal Properties
Cload — 10 pF — Usually crystals can be purchased tuned for different Cloads. This Cload value is
typically 1/2 of the capacitances realized on the PCB on either side of the quartz.
A higher Cload will decrease oscillation margin, but increases current oscillating
through the crystal.
ESR — 50 kΩ 100 kΩ Equivalent series resistance of the crystal. Choosing a crystal with a higher value
will decrease the oscillating margin.
0
or
1
Predriver
pdat
ovdd
pad
nmos (Rpd)
ovss
Voh min
Vol max
pmos (Rpu)