Datasheet
i.MX 6Dual/6Quad Automotive and Infotainment Applications Processors, Rev. 6, 11/2018
40 NXP Semiconductors
Electrical Characteristics
4.6.3 DDR I/O DC Parameters
The DDR I/O pads support LPDDR2 and DDR3/DDR3L operational modes.
4.6.4 RGMII I/O 2.5V I/O DC Electrical Parameters
The RGMII interface complies with the RGMII standard version 1.3. The parameters in Table 23 are
guaranteed per the operating ranges in Table 6, unless otherwise noted.
Table 22. GPIO I/O DC Parameters
Parameter Symbol Test Conditions Min Max Unit
High-level output voltage
1
1
Overshoot and undershoot conditions (transitions above OVDD and below GND) on switching pads must be held below 0.6 V,
and the duration of the overshoot/undershoot must not exceed 10% of the system clock cycle. Overshoot/ undershoot must be
controlled through printed circuit board layout, transmission line impedance matching, signal line termination, or other methods.
Non-compliance to this specification may affect device reliability or cause permanent damage to the device.
Voh Ioh = -0.1 mA (DSE
2
= 001, 010)
Ioh = -1 mA
(DSE = 011, 100, 101, 110, 111)
2
DSE is the Drive Strength Field setting in the associated IOMUX control register.
OVDD – 0.15 — V
Low-level output voltage
1
Vol Iol = 0.1 mA (DSE
2
= 001, 010)
Iol = 1mA
(DSE = 011, 100, 101, 110, 111)
—0.15V
High-Level DC input voltage
1,
3
3
To maintain a valid level, the transition edge of the input must sustain a constant slew rate (monotonic) from the current DC
level through to the target DC level, Vil or Vih. Monotonic input transition time is from 0.1 ns to 1 s.
Vih — 0.7
× OVDD OVDD V
Low-Level DC input voltage
1,
3
Vil — 0 0.3 × OVDD V
Input Hysteresis Vhys OVDD = 1.8 V
OVDD = 3.3 V
0.25 — V
Schmitt trigger VT+
3, 4
4
Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled.
VT+ — 0.5
× OVDD — V
Schmitt trigger VT–
3, 4
VT– — — 0.5 × OVDD V
Input current (no pull-up/down) Iin Vin = OVDD or 0 -1 1 μA
Input current (22 kΩ pull-up) Iin Vin = 0 V
Vin = OVDD
—212
1
μA
Input current (47 kΩ pull-up) Iin Vin = 0 V
Vin = OVDD
—100
1
μA
Input current (100 kΩ pull-up) Iin Vin = 0 V
Vin= OVDD
—48
1
μA
Input current (100 kΩ pull-down) Iin Vin = 0 V
Vin = OVDD
—1
48
μA
Keeper circuit resistance Rkeep Vin = 0.3 x OVDD
Vin = 0.7 x OVDD
105 175
kΩ