Datasheet
Revision History
i.MX 6DualPlus/6QuadPlus Automotive Applications Processors, Rev. 3, 11/2018
NXP Semiconductors 165
2
(Cont.)
11/2018 • Section 4.6.4, “RGMII I/O 2.5V I/O DC Electrical Parameters” on page 41: Added section and table.
• Section 4.10, “Multi-Mode DDR Controller (MMDC)” on page 64: Replaced section with new content.
Was 4.9.4 “DDR SDRAM Specific Parameters (DDR3/DDR3L/LPDDR2)” with timing diagrams and
parameter tables for DDR.
• Table 51, “eMMC4.4/4.41 Interface Timing Specification,” on page 81:
– Corrected SD3, uSDHC Input Setup Time, minimum value from 2.6ns to 1.7ns.
– Added footnote to Card Input Clock regarding duty cycle range.
• Table 52, “SDR50/SDR104 Interface Timing Specification,” on page 82: Changes to Min/Max values:
– SD2 min from: 0.3 x tCLK; to: 0.46 x tCLK
– SD2 max from: 0.7 x tCLK to: 0.54 x tCLK
– SD3 min from: 0.3 x tCLK; to: 0.46 x tCLK. Also corrected ID from duplicate SD2 to SD3.
– SD3 max from: 0.7 x tCLK; to: 0.54 x tCLK
– SD5 max from: 1 ns; to: 0.74 ns
• Table 62, “Camera Input Signal Cross Reference, Format, and Bits Per Cycle,” on page 95: Changed
RGB565, 16 bits column heading from 2 cycles to 1 cycle.
• Table 95, “21 x 21 mm Supplies Contact Assignment,” on page 144:
– Added description to ZQPAD.
– Added description to GPANAIO row: “…output for NXP use only…”
• Table 96, “21 x 21 mm Functional Contact Assignments,” on page 146:
– Changed DRAM_SDCLK_0,DRAM_SDCLK_1 from “Input–Hi-Z” to “Output–0”.
• Section 6.2.1.1, “21 x 21 mm Lidded Package” on page 142: Added section.
1 3/2016 Revision 1 changes are within Table 20, “Maximum Supply Currents” on page 48
Changed:
• VDD-ARM_IN with condition 996 MHz, CoreMark maximum current value from 1500 to 1200
VDD-ARM_IN with condition 852 MHz, CoreMark maximum current value from 1360 to 1090
• Added footnote regarding values are assumed when VDD_ARM23_IN and VDD_ARM23_CAP are
connected to ground.
0 12/2015 Initial Release
Table 99. i.MX 6DualPlus/6QuadPlus Data Sheet Document Revision History (continued)
Rev.
Number
Date Substantive Change(s)










