Datasheet

Electrical Characteristics
i.MX 6DualPlus/6QuadPlus Automotive Applications Processors, Rev. 3, 11/2018
NXP Semiconductors 41
4.6.4 RGMII I/O 2.5V I/O DC Electrical Parameters
The RGMII interface complies with the RGMII standard version 1.3. The parameters in Table 23 are
guaranteed per the operating ranges in Table 6, unless otherwise noted.
Table 23. RGMII I/O 2.5V I/O DC Electrical Parameters
1
1
Input Mode Selection: SW_PAD_CTL_GRP_DDR_TYPE_RGMII = 10 (1.8V Mode)
SW_PAD_CTL_GRP_DDR_TYPE_RGMII = 11 (2.5V Mode).
Parameter Symbol Test Conditions Min Max Units
High-level output voltage
1
V
OH
Ioh= -0.1 mA (DSE=001,010)
Ioh= -1.0 mA (DSE=011,100,101,110,111)
OVDD-0.15
—V
Low-level output voltage
1
V
OL
Iol= 0.1 mA (DSE=001,010)
Iol= 1.0 mA (DSE=011,100,101,110,111)
—0.15V
Input Reference Voltage V
ref
—
0.49xOVDD 0.51xOVDD
V
High-Level input voltage
2, 3
2
Overshoot and undershoot conditions (transitions above OVDD and below GND) on switching pads must be held below 0.6
V, and the duration of the overshoot/undershoot must not exceed 10% of the system clock cycle. Overshoot/ undershoot must
be controlled through printed circuit board layout, transmission line impedance matching, signal line termination, or other
methods. Non-compliance to this specification may affect device reliability or cause permanent damage to the device.
3
To maintain a valid level, the transition edge of the input must sustain a constant slew rate (monotonic) from the current DC
level through to the target DC level, Vil or Vih. Monotonic input transition time is from 0.1 ns to 1 s.
V
IH
—
0.7xOVDD OVDD
V
Low-Level input voltage
2, 3
V
IL
—0
0.3xOVDD
V
Input Hysteresis(OVDD=1.8V) V
HYS_HighVDD
OVDD=1.8V 250 — mV
Input Hysteresis(OVDD=2.5V) V
HYS_HighVDD
OVDD=2.5V 250 — mV
Schmitt trigger VT+
3, 4
4
Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled
(register IOMUXC_SW_PAD_CTL_PAD_RGMII_TXC[HYS]= 0).
V
TH+
—0.5xOVDD—mV
Schmitt trigger VT-
3, 4
V
TH-
— — 0.5xOVDD mV
Pull-up resistor (22 kΩ PU) R
PU_22K
V
in
=0V — 212 μA
Pull-up resistor (22 kΩ PU) R
PU_22K
V
in
=OVDD — 1 μA
Pull-up resistor (47 kΩ PU) R
PU_47K
V
in
=0V — 100 μA
Pull-up resistor (47 kΩ PU) R
PU_47K
V
in
=OVDD — 1 μA
Pull-up resistor (100 kΩ PU) R
PU_100K
V
in
=0V — 48 μA
Pull-up resistor (100 kΩ PU) R
PU_100K
V
in
=OVDD — 1 μA
Pull-down resistor (100 kΩ PD) R
PD_100K
V
in
=OVDD — 48 μA
Pull-down resistor (100 kΩ PD) R
PD_100K
V
in
=0V — 1 μA
Keeper Circuit Resistance R
keep
— 105 165 kΩ
Input current (no pull-up/down) I
in
V
I
= 0,VI = OVDD -2.9 2.9 μA