Datasheet

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C
HIVE INF
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RMATI
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ARCHIVE INFORMATION
1
MHW6222RF DEVICE DATA
The RF Line
   
. . . designed specifically for 550 MHz CATV applications. Features ion–im-
planted arsenic emitter transistors with 7.0 GHz f
T
and an all gold metallization
system.
• Specified for 77–Channel Performance
• Broadband Power Gain  @ f = 40–550 MHz
G
p
= 22 dB (Typ) @ 50 MHz
22 dB (Min) @ 550 MHz
• Broadband Noise Figure @ 550 MHz
NF = 6.0 dB (Max)
• Superior Gain, Return Loss and DC Current Stability with Temperature
• All Gold Metallization
• 7.0 GHz Ion–Implanted Transistors
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
RF Voltage Input (Single Tone) V
in
+60 dBmV
DC Supply Voltage V
CC
+28 Vdc
Operating Case Temperature Range T
C
–20 to +100 °C
Storage Temperature Range T
stg
–40 to +100 °C
ELECTRICAL CHARACTERISTICS (V
CC
= 24 Vdc, T
C
= +30°C, 75 Ω system unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Frequency Range BW 40 — 550 MHz
Power Gain — 50 MHz G
p
21.4 22 22.6 dB
Power Gain — 550 MHz G
p
22 — — dB
Slope S 0.2 — 1.5 dB
Gain Flatness (Peak To Valley) — — 0.2 0.4 dB
Return Loss — Input/Output
(Z
o
= 75 Ohms) 40–550 MHz
IRL/ORL 18 — — dB
Second Order Intermodulation Distortion
(V
out
= +46 dBmV per ch., Ch 2, M13, M22)
(V
out
= +44 dBmV per ch., Ch 2, M30, M39)
IMD
—
—
–80
–72
—
–66
dB
Cross Modulation Distortion
(V
out
= +46 dBmV per ch.) 60–Channel FLAT
(V
out
= +44 dBmV per ch.) 77–Channel FLAT
XMD
60
XMD
77
—
—
–60
–60
—
–57
dB
Composite Triple Beat
(V
out
= +46 dBmV per ch.) 60–Channel FLAT
(V
out
= +44 dBmV per ch.) 77–Channel FLAT
CTB
60
CTB
77
—
—
–61
–59
—
–57
dB
Noise Figure
(f = 550 MHz)
NF — 5.0 6.0 dB
DC Current I
DC
— 210 240 mA
Order this document
by MHW6222/D

SEMICONDUCTOR TECHNICAL DATA

22 dB GAIN
550 MHz
77–CHANNEL
CATV INPUT/OUTPUT
TRUNK AMPLIFIER
CASE 714Y–03, STYLE 1
 Motorola, Inc. 1998
REV 7