Datasheet
AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
1
MHW8185RRF DEVICE DATA
The RF Line
• Specified for 77, 110 and 128–Channel Performance
• Broadband Power Gain @ f = 860 MHz
G
p
= 19.4 dB (Typ)
• Broadband Noise Figure
NF = 7 dB (Typ) @ 860 MHz
• Pin Configuration Mirrors that of MHW8185
• Typical CTB @ 860 MHz under 128–Channel FLAT Loading = –67 dBc
• All Gold Metallization
• 7 GHz f
T
Ion–Implanted Transistors
MAXIMUM RATINGS
Rating Symbol Value Unit
RF Voltage Input (Single Tone) V
in
+70 dBmV
DC Supply Voltage V
CC
+28 Vdc
Operating Case Temperature Range T
C
–20 to +100 °C
Storage Temperature Range T
stg
–40 to +100 °C
ELECTRICAL CHARACTERISTICS (V
CC
= 24 Vdc, T
C
= +30°C, 75 Ω system unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Frequency Range BW 40 — 860 MHz
Power Gain 50 MHz
860 MHz
G
p
18.3
19
18.8
19.4
19.3
20.5
dB
Slope 40–860 MHz S 0 .5 1.5 dB
Gain Flatness (40–860 MHz, Peak to Valley) — — 0.3 1.0 dB
Return Loss — Input/Output (Z
o
= 75 Ohms)
@ 40 MHz
@ f > 40 MHz (Derate)
IRL/ORL
19
—
—
—
—
0.006
dB
dB/MHz
Composite Second Order
(V
out
= +40 dBmV/ch., Worst Case) 128–Channel FLAT
(V
out
= +44 dBmV/ch., Worst Case) 110–Channel FLAT
77–Channel FLAT
CSO
128
CSO
110
CSO
77
—
—
—
–70
–72
–80
–62
–64
–68
dBc
Cross Modulation Distortion @ Ch 2
(V
out
= +40 dBmV/ch., FM = 55 MHz) 128–Channel FLAT
(V
out
= +44 dBmV/ch., FM = 55 MHz) 110–Channel FLAT
77–Channel FLAT
XMD
128
XMD
110
XMD
77
—
—
—
–72
–67
–70
–64
–63
–68
dBc
Composite Triple Beat
(V
out
= +40 dBmV/ch., Worst Case) 128–Channel FLAT
(V
out
= +44 dBmV/ch., Worst Case) 110–Channel FLAT
77–Channel FLAT
CTB
128
CTB
110
CTB
77
—
—
—
–67
–64
–71
–64
–62
–69
dBc
Noise Figure 50 MHz
550 MHz
750 MHz
860 MHz
NF —
—
—
—
5.0
5.8
6.2
7.0
6.0
—
—
8.0
dB
DC Current (V
DC
= 24 V, T
C
= 30°C) I
DC
365 400 435 mA
Order this document
by MHW8185R/D
SEMICONDUCTOR TECHNICAL DATA
!
19.4 dB GAIN
860 MHz
128–CHANNEL
CATV AMPLIFIER
CASE 714Y–03, STYLE 2
Motorola, Inc. 1998
REV 1