Datasheet

NXP Semiconductors
MF0ICU2
MIFARE Ultralight C - Contactless ticket IC
MF0ICU2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.
Product data sheet Rev. 3.3 — 30 July 2019
COMPANY PUBLIC 137633 25 / 36
Symbol Parameter Min Max Unit
T
amb
ambient temperature -25 +70 °C
V
ESD
electrostatic discharge voltage on LA/LB
[1]
2 - kV
[1] ANSI/ESDA/JEDEC JS-001; Human body model: C = 100 pF, R = 1.5 kΩ
CAUTION
This device has limited built-in ElectroStatic Discharge (ESD) protection.
The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the gates.
11 Characteristics
11.1 Electrical characteristics
Table 29. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
f
i
input frequency - 13.56 - MHz
16 pF version (bare
silicon and MOA4)
[1]
14.08 16 17.92 pFC
i
input capacitance
50 pF version
[1]
44 50 56 pF
EEPROM characteristics
t
cy(W)
write cycle time - 4.1 - ms
t
ret
retention time T
amb
= 22 °C 10 - - year
N
endu(W)
write endurance T
amb
= 22 °C 100000 - - cycle
[1] T
amb
= 22 °C, f = 13.56 MHz, V
LaLb
= 1.5 V RMS
12 Wafer specification
Table 30. Wafer specifications MF0ICU2x01DUy
Wafer
diameter 200 mm typical (8 inches)
maximum diameter after foil expansion 210 mm
die separation process laser dicing
thickness MF0ICU2x01XDUD 120 μm ± 15 μm
MF0ICU2x01XDUF 75 μm ± 10 μm
flatness not applicable
Potential Good Dies per Wafer (PGDW) 61942
Wafer backside
material Si