SO T2 3 NX7002AK 60 V, single N-channel Trench MOSFET 6 August 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • Very fast switching Trench MOSFET technology ESD protected 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1.
NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 TO-236AB (SOT23) S 017aaa255 6. Ordering information Table 3. Ordering information Type number NX7002AK Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4.
NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa466 1 Limit RDSon = VDS/ID ID (A) (1) 10-1 (2) (3) (4) (5) 10-2 (6) 10-3 10-1 1 10 102 VDS (V) IDM = single pulse (1) tp = 100 µs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms 2 (6) DC; Tamb = 25 °C; drain mounting pad 1 cm Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6.
NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa467 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.33 0.2 0.05 10 0.01 0.5 0.25 0.1 0.02 0 1 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa468 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.33 0.2 0.05 10 0.01 0.5 0.25 0.1 0.
NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1.1 1.6 2.
NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa469 0.20 ID (A) ID (A) 4.5 V 0.15 017aaa470 10-3 10 V 3.0 V 10-4 2.3 V 2.5 V (1) (2) (3) 0.10 10-5 VGS = 2.0 V 0.05 0 Fig. 6. 0 1 2 3 VDS (V) 10-6 4 0 1 2 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a function of drain-source voltage; typical values (1) minimum values (2) typical values (3) maximum values Fig. 7. 017aaa471 10 RDSon (Ω) 2.
NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa473 0.20 ID (A) 017aaa474 2.0 a (2) 0.15 1.5 0.10 1.0 0.05 0.5 (1) 0 0 1 2 3 4 VGS (V) 0 -60 5 VDS > ID × RDSon 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values (1) Tj = 25 °C (2) Tj = 150 °C Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa475 2.
NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa477 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0 0.2 0.4 0.6 QG (nC) Fig. 15. MOSFET transistor: Gate charge waveform definitions 0.8 ID = 0.2 A; VDS = 30 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 017aaa478 0.20 IS (A) 0.15 (1) 0.10 (2) 0.05 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig.
NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition NX7002AK Product data sheet All information provided in this document is subject to legal disclaimers. 6 August 2015 © NXP Semiconductors N.V. 2015.
NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 3 leads SOT23 B D A E X HE v A 3 Q A A1 1 c 2 e1 bp w B Lp e detail X 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 1.1 0.1 0.9 bp c D E 0.48 0.15 3.0 1.4 0.38 0.09 2.8 1.2 e e1 1.9 0.95 HE Lp Q 2.5 0.45 0.55 2.1 0.15 0.45 v w 0.2 0.
NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19. Reflow soldering footprint for TO-236AB (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20.
NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes NX7002AK v.7 20150806 Product data sheet - NX7002AK v.6 Modifications: • NX7002AK v.6 20150521 Product data sheet - NX7002AK v.5 NX7002AK v.5 20130213 Product data sheet - NX7002AK v.4 NX7002AK v.4 20121213 Product data sheet - NX7002AK v.3 NX7002AK v.
NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.
NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ...................................
