Datasheet

PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 3 of 15
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
5. Limiting values
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1.
[1] Device stressed with ten non-repetitive ESD pulses; see Figure 2.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
pp
peak pulse power 8/20 µs
[1]
PESD3V3L1BA - 500 W
PESD5V0L1BA - 500 W
PESD12VL1BA - 200 W
PESD15VL1BA - 200 W
PESD24VL1BA - 200 W
I
pp
peak pulse current 8/20 µs
[1]
PESD3V3L1BA - 18 A
PESD5V0L1BA - 15 A
PESD12VL1BA - 5 A
PESD15VL1BA - 5 A
PESD24VL1BA - 3 A
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 6. ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
ESD electrostatic discharge capability IEC 61000-4-2
(contact discharge)
[1]
PESD3V3L1BA - 30 kV
PESD5V0L1BA - 30 kV
PESD12VL1BA - 30 kV
PESD15VL1BA - 30 kV
PESD24VL1BA - 23 kV
PESDxL1BA series HBM MIL-Std 883 - 10 kV
Table 7. ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD);
Figure 2 > 15 kV (air); > 8 kV (contact)
HBM MIL-Std 883; class 3 > 4 kV