Datasheet

PESD5ZX_SER_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 4 April 2008 5 of 17
NXP Semiconductors
PESD5Zx series
Low capacitance unidirectional ESD protection diodes
6. Characteristics
Table 9. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
RWM
reverse standoff voltage
PESD5Z2.5 - - 2.5 V
PESD5Z3.3 - - 3.3 V
PESD5Z5.0 - - 5.0 V
PESD5Z6.0 - - 6.0 V
PESD5Z7.0 - - 7.0 V
PESD5Z12 - - 12.0 V
I
RM
reverse leakage current
PESD5Z2.5 V
RWM
= 2.5 V - 0.5 6 µA
PESD5Z3.3 V
RWM
= 3.3 V - 8 50 nA
PESD5Z5.0 V
RWM
= 5.0 V - 5 50 nA
PESD5Z6.0 V
RWM
= 6.0 V - 2 10 nA
PESD5Z7.0 V
RWM
= 7.0 V - < 1 10 nA
PESD5Z12 V
RWM
= 12.0 V - < 1 10 nA
V
BR
breakdown voltage I
R
=1mA
PESD5Z2.5 4 - - V
PESD5Z3.3 5 - - V
PESD5Z5.0 6.2 - - V
PESD5Z6.0 6.8 - - V
PESD5Z7.0 7.5 - - V
PESD5Z12 14.1 - - V
C
d
diode capacitance f = 1 MHz; V
R
=0V
PESD5Z2.5 - 229 300 pF
PESD5Z3.3 - 172 200 pF
PESD5Z5.0 - 89 150 pF
PESD5Z6.0 - 78 150 pF
PESD5Z7.0 - 69 150 pF
PESD5Z12 - 35 75 pF
V
CL
clamping voltage I
PP
=5A
[1][2]
PESD5Z2.5 - 8 9 V
PESD5Z3.3 - 8 10 V
PESD5Z5.0 - 12 13 V
PESD5Z6.0 - 12 13 V
PESD5Z7.0 - 14 15 V
PESD5Z12 - 27 30 V