Datasheet

PESD5ZX_SER_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 4 April 2008 7 of 17
NXP Semiconductors
PESD5Zx series
Low capacitance unidirectional ESD protection diodes
f = 1 MHz; T
amb
=25°C
(1) PESD5Z2.5
(2) PESD5Z3.3
(3) PESD5Z5.0
f = 1 MHz; T
amb
=25°C
(1) PESD5Z6.0
(2) PESD5Z7.0
(3) PESD5Z12
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Diode capacitance as a function of reverse
voltage; typical values
PESD5Z2.5; V
RWM
= 2.5 V
PESD5Z3.3; V
RWM
= 3.3 V
I
R
is less than 50 nA at 150 °C for:
PESD5Z5.0; V
RWM
= 5.0 V
PESD5Z6.0; V
RWM
= 6.0 V
PESD5Z7.0; V
RWM
= 7.0 V
PESD5Z12; V
RWM
= 12.0 V
Fig 7. Relative variation of reverse current as a
function of junction temperature; typical values
Fig 8. V-I characteristics for a unidirectional
ESD protection diode
V
R
(V)
054231
006aab057
100
150
50
200
250
C
d
(pF)
0
(1)
(2)
(3)
006aab058
V
R
(V)
01284
40
60
20
80
100
C
d
(pF)
0
(1)
(2)
(3)
006aab059
1
10
I
R
I
R(25°C)
10
−1
T
j
(°C)
−100 150100050−50
006aaa407
−V
CL
−V
BR
−V
RWM
−I
RM
−I
R
−I
PP
V
I
P-N
−
+