Datasheet

TEA1892TS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 9 April 2014 5 of 13
NXP Semiconductors
TEA1892TS
GreenChip synchronous rectifier controller
The level of the driver regulation voltage V
reg(drv)
can be selected using the SELREG pin.
When this SELREG pin is grounded, the typical V
reg(drv)
equals 42 mV. When the
SELREG pin is left open, the V
reg(drv)
level equals 30 mV.
Internally, the SELREG pin has a pull-up current source of 10 A. When this pin is short
circuited to ground, the pin selects the lowest V
reg(drv)
. If the pin is left open, the highest
V
reg(drv)
value is selected.
7.4 Supply management
All internal reference voltages are derived from a temperature compensated, on-chip
band gap circuit.
7.5 Driver
The driver circuit to the external power MOSFET gate has a typical source capability of
400 mA and a typical sink capability of 2.7 A. These capabilities permit fast switch-on and
switch-off of the power MOSFET for efficient operation. The source stage is coupled to the
timer (see Figure 1
). When the timer has finished, the source capability is reduced to a
small current (5 mA typical) capable of keeping the driver output voltage at its level.
The output voltage of the driver is limited to 10 V (typical). This high output voltage drives
all MOSFET brands to the minimum on-state resistance.
During start-up conditions (V
CC
<V
startup
) and undervoltage lockout the driver output
voltage is actively pulled low.
Fig 3. Synchronous rectification signals
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