Datasheet

UBA20260 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 10 October 2011 21 of 30
NXP Semiconductors
UBA20260
600 V driver IC for step dimmable CFLs
[1] See Table 6 on page 25 for the default settings.
[2] The half-bridge output switching frequency (HBO). The saw-tooth frequency on pin CF is twice as high.
[3] Data sampling of V
ph(SLS)
is performed at the end of the LS power MOSFET conduction period in preheat state.
[4] Data sampling of V
th(capm)SLS
is performed at the start of conduction of the LS power MOSFET, in all states with oscillator active.
V
dim2(CSI)
dimming 2 voltage difference on
pin CSI
RMS voltage; offset from V
i(CSI)
at
DIM_2 compared to MDL
330 350 370 mV
V
dim3(CSI)
dimming 3 voltage difference on pin
CSI
RMS voltage; offset from V
i(CSI)
at
DIM_3 compared to MDL
90 100 110 mV
Output pin CI
I
o(CI)
output current on pin CI burn state; V
CI
= 2 V; source ()
and sink (+)
85 95 105 A
Input pin MDL (minimum dimming level)
I
source(MDL)
source current on pin MDL 26.3 25 23.7 A
V
MDL
voltage on pin MDL R
ext(RREF)
= 33 k; R
MDL
= 2 k -50-mV
Temperature protection
T
j(otp)
overtemperature protection junction
temperature
145 160 170 C
T
j(otp)hys
hysteresis overtemperature
protection junction temperature
10 20 30 C
Input pin CSI
V
otp(CSI)
overtemperature protection voltage
on pin CSI
RMS voltage; R
ext(RREF)
= 33 k;
R
MDL
=2 k; T
j
>T
j(opt)
 T
j(hys)(otp)
380 400 420 mV
Table 5. Characteristics
…continued
V
DD
=13 V; V
FS
 V
HBO
=13 V; T
amb
=25  C; settings according to default setting see Table 6 on page 25, all voltages
referenced to PGND and SGND, positive currents flow into the UBA20260, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit