Datasheet

172 EE-SF5(-B) Photomicrosensor (Reflective)
Photomicrosensor (Reflective)
EE-SF5(-B)
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Features
• Dust-tight construction.
• With a visible-light intercepting filter which allows objects to be
sensed without being greatly influenced by the light radiated from
fluorescent lamps.
• Mounted with M2 screws.
• Model with soldering terminals (EE-SF5).
• Model with PCB terminals (EE-SF5-B).
• Recommended sensing distance = 5.0 mm
■ Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max.
±0.3
3
< mm ≤ 6 ±0.375
6
< mm ≤ 10 ±0.45
10
< mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
A
K
E
C
Matted
1.9 dia.
2.2±0.2 dia. hole
Four, 0.25
Four,
0.5
Four,
1.5
EE-SF5 EE-SF5-B
2.54±0.2
2.54
7.62±0.3
7.6±1
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Emitter Forward current I
F
50 mA
(see note 1)
Pulse forward cur-
rent
I
FP
1 A
(see note 2)
Reverse voltage V
R
4 V
Detector Collector–Emitter
voltage
V
CEO
30 V
Emitter–Collector
voltage
V
ECO
---
Collector current I
C
20 mA
Collector dissipa-
tion
P
C
100 mW
(see note 1)
Ambient tem-
perature
Operating Topr –25°C to 80°C
Storage Tstg –30°C to 80°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltag e V
F
1.2 V typ., 1.5 V max. I
F
= 30 mA
Reverse current I
R
0.01 μA typ., 10 μA max. V
R
= 4 V
Peak emission wavelength λ
P
940 nm typ. I
F
= 20 mA
Detector Light current I
L
200 μA min., 2,000 μA max. I
F
= 20 mA, V
CE
= 10 V
White paper with a reflection ratio of
90%, d = 5 mm (see note)
Dark current I
D
2 nA typ., 200 nA max. V
CE
= 10 V, 0 lx
Leakage current I
LEAK
2 μA max. I
F
= 20 mA, V
CE
= 10 V with no reflec-
tion
Collector–Emitter saturated volt-
age
V
CE
(sat) --- ---
Peak spectral sensitivity wave-
length
λ
P
850 nm typ. V
CE
= 10 V
Rising time tr 30 μs typ. V
CC
= 5 V, R
L
= 1 kΩ, I
L
= 1 mA
Falling time tf 30 μs typ. V
CC
= 5 V, R
L
= 1 kΩ, I
L
= 1 mA
Be sure to read Precautions on page 24.