Datasheet

36 EE-SX1042 Photomicrosensor (Transmissive)
Photomicrosensor (Transmissive)
EE-SX1042
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Features
• 14.5-mm-tall model with a deep slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max.
±0.3
3
< mm ≤ 6 ±0.375
6
< mm ≤ 10 ±0.45
10
< mm ≤ 18 ±0.55
18
< mm ≤ 30 ±0.65
5 min.
Four, C0.3
Four, 0.25
Cross section AA
0.5±0.05
(11.2)
(1.92)
14.5
12±0.4
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Emitter Forward current I
F
50 mA
(see note 1)
Pulse forward cur-
rent
I
FP
1 A
(see note 2)
Reverse voltage V
R
4 V
Detector Collector–Emitter
voltage
V
CEO
30 V
Emitter–Collector
voltage
V
ECO
---
Collector current I
C
20 mA
Collector dissipa-
tion
P
C
100 mW
(see note 1)
Ambient tem-
perature
Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage V
F
1.2 V typ., 1.5 V max. I
F
= 30 mA
Reverse current I
R
0.01 μA typ., 10 μA max. V
R
= 4 V
Peak emission wavelength λ
P
940 nm typ. I
F
= 20 mA
Detector Light current I
L
0.5 mA min., 10 mA max. I
F
= 20 mA, V
CE
= 10 V
Dark current I
D
2 nA typ., 200 nA max. V
CE
= 10 V, 0 lx
Leakage current I
LEAK
--- ---
Collector–Emitter saturated volt-
age
V
CE
(sat) 0.1 V typ., 0.4 V max. I
F
= 20 mA, I
L
= 0.1 mA
Peak spectral sensitivity wave-
length
λ
P
850 nm typ. V
CE
= 10 V
Rising time tr 4 μs typ. V
CC
= 5 V, R
L
= 100 Ω, I
L
= 5 mA
Falling time tf 4 μs typ. V
CC
= 5 V, R
L
= 100 Ω, I
L
= 5 mA
Be sure to read Precautions on page 25.