Datasheet

1
Photomicrosensor (Transmissive)
EE-SX1340
Compact Slot / SMD Type
(Slot width: 4 mm)
• Unique 4 mm Slot width.
• PCB surface mounting type.
• High resolution with a 0.5-mm-wide aperture.
Ordering Information
Photomicrosensor
Ratings, Characteristics and Exterior Specifications
Absolute Maximum Ratings (Ta = 25°C)
*1. Continuous Forward Current and Collector Power Dissipation
must be derated complying. The product should be used without
freezing or condensation.
*2. In case of reflow soldering, conditions which are shown at the
temperature profile should be kept.
Exterior Specifications
Electrical and Optical Characteristics (Ta = 25°C)
* Refer to the following timing diagram for tr and tf.
Be sure to read Safety Precautions on page 3.
Appearance
Sensing
method
Connecting
method
Sensing distance
Aperture size (H × W)
(mm)
Output type Model
Transmissive
(slot type)
SMT
Emitter 1.04
× 1.4
Detector 1.4
× 0.5
Phototransistor EE-SX1340
4
5.5
8
4 mm (slot width)
Item Symbol Rated value Unit Remarks
Emitter
Forward
current
I
F 30 mA --- *1
Pulse forward
current
I
FP 100 mA
Duty ratio:
1%
Puls width:
0.1 ms
Reverse
voltage
V
R 4 V ---
Detector
Collector-
Emitter voltage
V
CEO 12 V ---
Emitter-
Collector
voltage
V
ECO 5 V ---
Collector
current
I
C 20 mA ---
Collector
dissipation
P
C 50 mW --- *1
Operating
temperature
T
opr -30 to 85 °C --- *1
Storage
temperature
T
stg -40 to 100 °C --- *1
Reflow soldering
temperature
T
sol 255 °C
10 sec.
max. *2
Connecting method Weight (g)
Material
Case
SMT 0.2 PPS
Item Symbol
Value
Unit Condition
MIN. TYP. MAX.
Emitter
Forward
voltage
V
F --- 1.2 1.5 V IF = 30 mA
Reverse
current
I
R --- 0.01 10 μAVR = 4 V
Peak emission
wavelength
λ
P --- 940 --- nm IF = 20 mA
Detector
Light current IL 0.55 --- 5.5 mA
I
F = 20 mA,
V
CE = 10 V
Dark current ID --- 10 200 nA
V
CE = 10 V,
0 lx
Collector-
Emitter
saturated
voltage
V
CE (sat) --- 0.1 0.4 V
I
F = 20 mA,
I
L = 0.1 mA
Peak spectral
sensitivity
wavelength
λ
P --- 900 --- nm VCE = 5 V
Rising time tr --- 11 --- μs
V
CC = 5 V,
R
L = 100 Ω
I
L = 1 mA *
Falling time tf --- 14 --- μs
V
CC = 5 V,
R
L = 100 Ω
I
L = 1 mA *
Input
Output
Output
Input
90%
10%
t
t
f t r
t
0
V CC
R L
0
I L