Datasheet

1
Photomicrosensor (Reflective)
EE-SY193
Ultra-compact SMD Type with
a detectable sensing distance of
1 mm
• PCB surface mounting type.
Model Number Structure
Ordering Information
Photomicrosensor
* Types with 100 pcs/box re available. The model name for ordering is EE-SY193-1.
Note: Order in multiples of minimum packing unit.
Ratings, Characteristics and Exterior Specifications
Absolute Maximum Ratings (Ta = 25°C)
*1. Refer to the temperature rating chart if the ambient temperature
exceeds 25°C.
*2. Duty: 1/100; Pulse width: 0.1 ms
*3. Complete soldering within 10 seconds for reflow soldering and
within 3 seconds for manual soldering.
Exterior Specifications
Electrical and Optical Characteristics (Ta = 25°C)
* The letter “d” indicates the distance between the top surface of the
sensor and the sensing object.
RoHS Compliant
Be sure to read Safety Precautions on page 3.
(2)(1)
EE-S Y 1 93
(3) (4)
(1)
Photomicrosensor
(2)
Reflective
(4)
Serial number
(3)
Phototransistor output
Appearance
Sensing
method
Connecting
method
Sensing distance Output type Model
Minimum
packing unit
(Unit: pcs)/
Reflective SMT 1 mm Phototransistor EE-SY193 * 3,000 *
3.35
0.95
2.65
Item Symbol Rated value Unit
Emitter
Forward current IF 25 *
1
mA
Pulse forward current IFP 100 *
2
A
Reverse voltage VR 6V
Detector
Collector-Emitter voltage VCEO 18 V
Emitter-Collector voltage VECO 4V
Collector current IC 20 mA
Collector dissipation PC 75 *
1
mW
Ambient temperature
Operating Topr –30 to 80 °C
Storage Tstg –40 to 85 °C
Reflow soldering Tsol 220 *
3
°C
Manual soldering Tsol 300 *
3
°C
Connecting method Weight (g)
Material
Mold
SMT 0.014 LCP
Item
Sym
bol
Value
Unit Condition
MIN. TYP. MAX.
Emitter
Forward voltage VF --- 1.1 1.3 V IF = 4 mA
Reverse current IR --- --- 10 μAVR = 6 V
Peak emission
wavelength
λ
P --- 940 --- nm IF = 20 mA
Detector
Light current IL 100 150 360 μA
Aluminum
deposited
surface,
I
F = 4 mA,
V
CE = 2 V,
d = 1 mm *
Dark current ID --- --- 100 nA
V
CE = 10
V,0 lx
Leakage current ILEAK --- --- 1 μA
I
F = 4 mA,
V
CE = 2 V
Collector-Emitter
saturated voltage
VCE
(sat)
--- --- --- --- ---
Peak spectral
sensitivity
wavelength
λ
P --- 900 --- nm ---
Rising time tr --- 25 --- μs
V
CC = 2 V,
R
L = 1 kΩ,
Falling time tf --- 30 --- μs
V
CC = 2 V,
R
L = 1 kΩ,