Datasheet

ManualsBrandsOmron Electronic Components ManualsMOSFET RelaysMOSFET Relay G3VM, Module, 1CO, 60V, 400mA

G3VM-66M

MOS FET Relay Module

MOS FET Relay in module package

with SPDT

• This model of operated by voltage (Rated input voltage is 5 VDC.)

• Contribute to reduce the mounting space on the print circuit board

by small package

• Contact form SPDT

• Load Voltage 60 V

• Surface-mounting

Application Examples

Ordering Information

Note: The AC peak and DC value are given for the load voltage and continuous load current.

Absolute maximum rating(Ta=25°C)

Electrical characteristics(Ta=25°C)

RoHS Compliant

Package (Unit: mm) Model Number Legend

Construction Rated input voltage

Load voltage

(AC peak/DC)

Continuous load current

(AC peak/DC)

MODEL

Minimum

package

quantity

Enclosure rating Contact form Vcc VCBIT Ta=25°C Ta=80°C

Fully Sealed SPDT 5 VDC 5 VDC 60 V 400 mA 130 mA G3VM-66M 50 pcs/tube

Item Symbol Rating Unit Measurement Connditions

Input Rated input voltage

VCC

MIN 4.8 V

Io (peak)=400 mA

MAX 5.2 V

VCBIT

MIN 4.5 V

MAX 5.5 V

Output

Load voltage (AC peak/DC) VOFF 60 V Vcc=5 V, Io=400 mA

Continuous load current (AC peak/DC) Io 400 mA

Vcc=5 V

Pulse ON current Iop 1,200 mA Vcc=5 V, t=100 ms, Duty=1/10

Dielectric strength between input / output terminals VI-O 500 Vrms

50/60 Hz, 1 min

Ambient storage temperature Tstg -30 to 100 °C

With no icing condensation

Ambient operating temperature Ta -30 to 80 °C

With no icing condensation

Ambient operating humidity 45 to 85 %

Item Symbol Minimum Typical Maximum Unit Measurement conditions

Input Input current IINPUT - 7.3 15 mA Vcc=5 V

Output

ON state resistance of output RON -11.5Ω Vcc=5 V, Io=400 mA

OFF state Current leakage ILEAK - - 2 nA Voff=60 V

OFF state capacitance between output terminals COFF - 20 - pF Vs=0 V, f=100 MHz, t<1 s

Capacitance between input / output terminals CI-O - 3.5 - pF Vs=0 V, f=1 MHz

Insulation resistance between input / output terminals RI-O 500 - - MΩ VI-O=500 VDC

Operate time tON -0.31ms

Vcc=5 V, Io=400 mA,

Voff=60 V

Release time tOFF -0.11ms

• Semiconductor test equipment

5±0.3

10±0.3

11 ±0.3

G3VM-@ @ @

123

1. Load Voltage

6: 60 V

3. Package

M: Module

2. Contact form

6: SPDT

Note: See Device Function Modes

on the page 2.

Summary of content (6 pages)

PAGE 1
G3VM-66M MOS FET Relay Module MOS FET Relay in module package with SPDT • This model of operated by voltage (Rated input voltage is 5 VDC.) • Contribute to reduce the mounting space on the print circuit board by small package • Contact form SPDT • Load Voltage 60 V • Surface-mounting RoHS Compliant Application Examples • Semiconductor test equipment Package (Unit: mm) Model Number Legend G 3 V M -@ @ @ 1 2 3 1. Load Voltage 6: 60 V 11 ±0.3 2. Contact form 6: SPDT 3.
PAGE 2
G3VM-66M MOS FET Relay Module Engineering Data IINPUT - Ta ● Continuous load current vs. Ambient Temperature (Average value) Continuous load current (mA) Input current (mA) Io (peak) = 400 mA Vcc = 5V DC 7.0 6.0 -40 -20 0 20 40 60 80 100 Io (peak) - Ta (Peak value) 450 8.0 400 Vcc=5 V 350 300 250 200 150 100 50 0 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 120 Ambient Temperature (Υ) Ambient Temperature Ta (Υ) ● On-state resistance vs. Ambient temperature Ron - Ta 2.
PAGE 3
G3VM-66M MOS FET Relay Module Appearance / Terminal Arrangement / Internal Connections ●Appearance ●Terminal Arrangement/Internal Connections (Top View) F Model name E D AVcc FNO G3VM-66M Pin 1 mark A B C BGND Switching Circuit ECOM VCC : 5VDC CBIT : 5VDC LOAD : 60Vpeak CCBIT Lot No. Lot No. MADE IN JAPAN DNC The condition of "NO/NC" in this Terminal Arrangement/Internal Connections (Top View) Input 5V DC between Vcc-Gnd. Please refer to Timing Diagram on the page 2 for more detail.
PAGE 4
G3VM-66M MOS FET Relay Module Safety Precautions Caution Precautions for Correct Use Always turn OFF the power supply before performing wiring. Not doing so may cause electrical shock. (1) Derating design Consideration for derating is critical for achieving required system reliability. Attention should be paid for derating against maximum rating and recommended operating conditions. In addition to this, there should be enough margin based on machine and environmental conditions.
PAGE 5
G3VM-66M MOS FET Relay Module 4) Dip cleaning, shower cleaning, and steam cleaning are performed by chemical action of solvent. Consider immersion time in solvent and steam within 1 minute at liquid temperature of 50°C or less, taking into consideration influence on MOS FET relay. 5) Dry thoroughly after cleaning so that there is no residue of cleaning solution.
PAGE 6
G3VM-66M MOS FET Relay Module • Application examples provided in this document are for reference only. In actual applications, confirm equipment functions and safety before using the product.