Datasheet

2
G3VM-66M MOS FET Relay Module
Engineering Data
●Device Functional Modes *
* H: 5 V, L: 0 V, X: don’t care
●Timing Diagram
If the input voltage is applied with sweeping condition to the MOS FET Relay,
both of the output circuits; NO side and NC side will turn ON at the same time.
The rise time of the input voltage must be 5 micro seconds or less, otherwise
malfunction or failure may occur.
●Measurement Circuit
● Input current vs. Ambient temperature ● Continuous load current vs.
Ambient Temperature
● Output terminal capacitance vs.
Load voltage
● On-state resistance vs. Ambient
temperature
● Current leakage vs. Ambient
temperature
6.0
7.0
8.0
-40 -20 0 20 40 60 80 100 120
Ambient Temperature Ta (Υ)
Input current (mA)
(Average value)
I INPUT - Ta
Io (peak) = 400 mA
Vcc = 5V DC
0
50
100
150
200
250
300
350
400
450
0 102030-30 -20 -10 40 50 60 70 80 90
Vcc=5 V
Ambient Temperature (Υ)
Continuous load current (mA)
(Peak value)
Io (peak) - Ta
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 5 10 15 20 25 30 35 40
Output terminal capacitance C
OFF
/C
OFF
(0V)
Load voltage V OFF (V)
C
OFF
- Voff (peak)
(Average value)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-40 -20 0 20 40 60 80 100 120
Ambient Temperature (Υ)
On-state resistance Ron(Ω)
(Average value)
Ron - Ta
Io (peak) = 400 mA
Vcc = 5V DC
Ambient Temperature (Υ)
Current leakage ILEAK (pA)
(Average value)
I LEAK - Ta
1
10
100
1,000
10,000
100,000
-40 -20 0 20 40 60 80 100 120
Voff (peak)=60 V
INPUT C BIT LOAD
PINA PINB PINC PIND-E PINF-E
HLHONOFF
HLLOFFON
LLXOFFOFF
tOFF
VCC
VCBIT
90%
10%
10%
90%
90%
10%
5 µs
5 µs5 µs
t
OFF
tON
tON
6
5
4
1
2
3
RL1
RL2