Datasheet

1
Photomicrosensor (Reflective)
EE-SF5/EE-SF5-B
Reflective/Terminal Type with Visible Light
Cut Filter (Standard Sensing Distance = 5 mm)
• Dust resistant structure
• Includes screw mounting holes (M2)
• Two types of terminals (terminal for cord soldering, terminal for PCB
mounting)
Ordering Information
Photomicrosensor
Note: Order in multiples of minimum packing unit.
Ratings, Characteristics and Exterior Specifications
Absolute Maximum Ratings (Ta = 25°C)
*1. Refer to the temperature rating chart if the ambient temperature
exceeds 25°C.
*2. Pulse width ≤ 10 μs, Repeated 100 Hz
*3. Complete soldering within 10 seconds.
Exterior Specifications
Electrical and Optical Characteristics (Ta = 25°C)
* “d” is the distance from the top of the sensor to the reflective surface
RoHS Compliant
Be sure to read Safety Precautions on Page 3.
Appearance Sensing method
Connecting
method
Standard sensing
distance
Output type Model
Minimum
packing unit
(Unit: pcs)
Reflective
Terminal for
cord soldering
Phototransistor
EE-SF5
1
Terminal for PCB
mounting
EE-SF5-B
8
13
5.4
5 mm
8
13
5.4
Item Symbol Rated value Unit
Emitter
Forward current IF 50*
1
mA
Pulse forward
current
I
FP 1*
2
A
Reverse voltage VR 4V
Detector
Collector-Emitter
voltage
V
CEO 30 V
Emitter-Collector
voltage
V
ECO —V
Collector current IC 20 mA
Collector
dissipation
P
C 100*
1
mW
Operating temperature Topr -25 to 80 °C
Storage temperature Tstg -30 to 80 °C
Soldering temperature Tsol 260*
3
°C
Connecting method Weight (g)
Material
Case
Terminal for cord
soldering
0.7 Polycarbonate
Terminal for PCB
mounting
Item Symbol
Value
Unit Condition
MIN. TYP. MAX.
Emitter
Forward voltage VF —1.21.5VIF = 30 mA
Reverse current IR —0.0110μAVR = 4 V
Peak emission
wavelength
λ
P — 940 — nm IF = 20 mA
Detector
Light current IL 200 — 2000 μA
I
F = 20 mA,
V
CE = 10 V
Reflectance 90%
White paper
d = 5 mm
*
Dark current ID — 2 200 nA
V
CE = 10 V,
0 lx
Leakage current ILEAK —— 2μA
I
F = 20 mA,
V
CE = 10 V
Non-reflective
state
Collector-Emitter
saturated
voltage
V
CE
(sat)
———V —
Peak spectral
sensitivity
wavelength
λ
P — 850 — nm VCE = 10 V
Rising time tr — 30 — μs
V
CC = 5 V,
R
L = 1 kΩ
I
L = 1 mA
Falling time tf — 30 — μs
V
CC = 5 V,
R
L = 1 kΩ
I
L = 1 mA