Datasheet

1
Photomicrosensor (Transmissive)
EE-SV3 Series
Slot/Terminal Type with Screw
Mounted Tab (Slot Width: 3.4 mm)
• Four aperture types
• Two types of terminals (terminal for cord soldering,
terminal for PCB mounting)
Ordering Information
Photomicrosensor
Note: Order in multiples of minimum packing unit.
Ratings, Characteristics and Exterior Specifications
Absolute Maximum Ratings (Ta = 25°C)
*1. Refer to the temperature rating chart if the ambient temperature
exceeds 25°C.
*2. Pulse width ≤ 10
μ s, Repeated 100 Hz
*3. Complete soldering within 10 seconds.
Exterior Specifications
Electrical and Optical Characteristics (Ta = 25°C)
RoHS Compliant
Be sure to read Safety Precautions on Page 3.
Appearance
Sensing
method
Connecting
method
Sensing distance
Aperture size
(H × W) (mm)
(
Both emitting side
and detecting side
)
Output type Model
Minimum
packing unit
(Unit: pcs)
Transmissive
(slot type)
Terminal for
cord soldering
2.1 × 0.5
Phototransistor
EE-SV3
1
2.1 × 1
EE-SV3-CS
2.1 × 0.2
EE-SV3-DS
0.5 × 2.1
EE-SV3-GS
Terminal
for PCB
mounting
2.1 × 0.5
EE-SV3-B
2.1 × 1
EE-SV3-C
2.1 × 0.2
EE-SV3-D
0.5 × 2.1
EE-SV3-G
10.2
15.1
19
3.4 mm (Slot width)
10.2
15.1
19
Item Symbol Rated value Unit
Emitter
Forward current IF 50*
1
mA
Pulse forward
current
I
FP 1*
2
A
Reverse voltage VR 4V
Detector
Collector-Emitter
voltage
V
CEO 30 V
Emitter-Collector
voltage
V
ECO —V
Collector current IC 20 mA
Collector
dissipation
P
C 100*
1
mW
Operating temperature Topr -25 to 85 °C
Storage temperature Tstg -30 to 100 °C
Soldering temperature Tsol 260*
3
°C
Connecting method Model Weight (g)
Material
Case
Bottom
plate
Terminal for
cord soldering
EE-SV3
1
Polycar-
bonate
Polycar-
bonate
EE-SV3-CS
EE-SV3-DS
EE-SV3-GS
Terminal for PCB
mounting
EE-SV3-B
EE-SV3-C
EE-SV3-D
EE-SV3-G
Item
Sym-
bol
Value
Unit Condition
EE-SV3
EE-SV3-B
EE-SV3-C
EE-SV3-CS
EE-SV3-D
EE-SV3-DS
EE-SV3-G
EE-SV3-GS
Emitter
Forward
voltage
V
F
1.2 (TYP.)
1.5 (MAX.)
VI
F = 30 mA
Reverse
current
I
R
0.01 (TYP.)
10 (MAX.)
μAV
R = 4 V
Peak
emission
wavelength
λ
P 940 (TYP.) nm IF = 20 mA
Detector
Light
current
I
L 0.5 to 14 1 to 28
0.1
(MIN.)
0.5 to 14 mA
I
F = 20 mA,
V
CE = 10 V
Dark
current
I
D
2 (TYP.)
200 (MAX.)
nA
VCE = 10 V,
0 lx
Leakage
current
I
LEAK — μA—
Collector-
Emitter
saturated
voltage
V
CE
(sat)
0.1 (TYP.)
0.4 (MAX.)
—
0.1
(TYP.)
0.4
(MAX.)
V
I
F = 20 mA,
I
L = 0.1 mA
Peak
spectral
sensitivity
wavelength
λ
P 850 (TYP.) nm VCE = 10 V
Rising time tr 4 (TYP.) μsVCC = 5 V,
R
L = 100 Ω
IL = 5 mA
Falling time tf 4 (TYP.) μs