Datasheet

90 EE-SX1106 Photomicrosensor (Transmissive)
Photomicrosensor (Transmissive)
EE-SX1106
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Features
• Ultra-compact with a slot width of 3 mm.
• PCB mounting type.
• High resolution with a 0.4-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25
°C.
2. Complete soldering within 3 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Four, 0.2
Two, C0.7
Optical
axis
Gate
Four, 0.5
Two, R 1
Two, C0.2
1
0
−0.1
dia
1.4
0
−0.1
dia
5.4
5 min.
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Unless otherwise specified,
the tolerances are ±0.2 mm.
Item Symbol Rated value
Emitter Forward current I
F
50 mA
(see note 1)
Pulse forward cur-
rent
I
FP
---
Reverse voltage V
R
5 V
Detector Collector–Emitter
voltage
V
CEO
30 V
Emitter–Collector
voltage
V
ECO
4.5 V
Collector current I
C
30 mA
Collector dissipa-
tion
P
C
80 mW
(see note 1)
Ambient tem-
perature
Operating Topr –25
°C to 85°C
Storage Tstg –30
°C to 85°C
Soldering temperature Tsol 260
°C
(see note 2)
Item Symbol Value Condition
Emitter Forward voltage V
F
1.3 V typ., 1.6 V max. I
F
= 50 mA
Reverse current I
R
10 µA max. V
R
= 5 V
Peak emission wavelength
λ
P
950 nm typ. I
F
= 50 mA
Detector Light current I
L
0.2 mA min. I
F
= 20 mA, V
CE
= 5 V
Dark current I
D
500 nA max. V
CE
= 10 V, 0 lx
Leakage current I
LEAK
--- ---
Collector–Emitter saturated volt-
age
V
CE
(sat) 0.4 V max. I
F
= 20 mA, I
L
= 0.1 mA
Peak spectral sensitivity wave-
length
λ
P
800 nm typ. V
CE
= 5 V
Rising time tr 10
µs typ. V
CC
= 5 V, R
L
= 100 Ω,
I
F
= 20 mA
Falling time tf 10
µs typ. V
CC
= 5 V, R
L
= 100 Ω,
I
F
= 20 mA