Datasheet

1
Photomicrosensor (Reflective)
EE-SY169A
Compact Reflective Type
(Standard Sensing Distance = 4 mm)
• Featuring an embedded high performance lens for highly precise
detection of ±0.6 mm
• Infrared LED type
• Diffuse-reflective/Light convergent reflective
Ordering Information
Photomicrosensor
Note: Order in multiples of minimum packing unit.
Ratings, Characteristics and Exterior Specifications
Absolute Maximum Ratings (Ta = 25ºC)
*1. Refer to the temperature rating chart if the ambient temperature
exceeds 25°C.
*2. Pulse width ≤ 10 μs, Repeated 100 Hz
*3. Complete soldering within 10 seconds.
Exterior Specifications
Electrical and Optical Characteristics (Ta = 25°C)
* “d” is the distance from the top of the sensor to the reflective surface
RoHS Compliant
Be sure to read Safety Precautions on Page 3.
Appearance Sensing method Connecting method
Standard sensing
distance
Output type Model
Minimum
packing unit
(Unit: pcs)
Reflective
Terminal for PCB
mounting
Phototransistor
EE-SY169A
1
6
12.5
8
4 mm
Item Symbol Rated value Unit
Emitter
Forward current IF 50*
1
mA
Pulse forward
current
I
FP 1*
2
A
Reverse voltage VR 3V
Detector
Collector-
Emitter voltage
V
CEO 30 V
Emitter-
Collector voltage
VECO —V
Collector current IC 20 mA
Collector
dissipation
P
C 100*
1
mW
Operating temperature Topr 0 to 70 °C
Storage temperature Tstg -20 to 80 °C
Soldering temperature Tsol 260*
3
°C
Connecting method Weight (g)
Material
Case Lens
Terminal for PCB
mounting
0.7 ABS PMMA
Item Symbol
Value
Unit Condition
MIN. TYP. MAX.
Emitter
Forward voltage VF ——1.5VIF = 30 mA
Reverse current IR ——10μAVR = 4 V
Peak emission
wavelength
λ
P —920— nmIF = 20 mA
Detector
Light current IL 160 — 2000 μA
I
F = 20 mA,
V
CE = 5 V
Reflectance 90%
white paper
d = 4 mm*
Dark current ID — 2 200 nA
V
CE = 5 V,
0 lx
Leakage current ILEAK —— 2μA
I
F = 20 mA,
V
CE = 5 V
Non-reflective
state
Collector-
Emitter saturated
voltage
V
CE
(sat)
——— V —
Peak spectral
sensitivity
wavelength
λ
P —850— nmVCE = 5 V
Rising time tr — 30 — μs
V
CC = 5 V,
R
L = 1 kΩ
I
L = 1 mA
Falling time tf — 30 — μs
V
CC = 5 V,
R
L = 1 kΩ
I
L = 1 mA